Improvement of Breakdown Characteristics of a GaN HEMT with AlGaN Buffer Layer
文献类型：期刊论文
| 作者 | Chen, Y ; Jiang, Y ; Xu, PQ ; Ma, ZG ; Wang, XL ; He, T ; Peng, MZ ; Luo, WJ ; Liu, XY ; Wang, L ; Jia, HQ ; Chen, H |
| 刊名 | JOURNAL OF ELECTRONIC MATERIALS
 |
| 出版日期 | 2012 |
| 卷号 | 41期号:3页码:471 |
| 关键词 | ELECTRON-MOBILITY TRANSISTORS SURFACE PASSIVATION HETEROSTRUCTURES SAPPHIRE LEAKAGE GROWTH |
| ISSN号 | 0361-5235 |
| 通讯作者 | Chen, Y: Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Inst Phys, Beijing 100190, Peoples R China. |
| 中文摘要 | Low cost reflectors were applied to dye-sensitized solar cell modules to reduce the energy losses caused by the inactive areas occupied by sealing materials and metal fingers, and significant improvement of overall efficiency was achieved. An improved model was used to simulate the modules, and the optimized geometry parameters of the modules were obtained. After applying the reflectors, wider silver fingers, and smaller cells were recommended for large area modules, and the influence of the width of sealing material was reduced. Simulation results show that the maximum total area efficiency of 11.22% for large area modules could be achieved based on the small cell with efficiency of 11.4% and reflectors with reflectivity of 0.9. The reflectors can be utilized in any kind of solar cell with inactive areas. The model can also be applied to other kinds of solar cell module with any geometry characters, and the optimized parameters can be obtained easily for any design. (C) 2011 Elsevier B.V. All rights reserved. |
| 收录类别 | SCI |
| 资助信息 | National Natural Science Foundation of China [50872146, 60877006, 60890192/F0404]; Chinese Science and Technology Ministry [2010CB327501] |
| 语种 | 英语 |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/39664]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Chen, Y,Jiang, Y,Xu, PQ,et al. Improvement of Breakdown Characteristics of a GaN HEMT with AlGaN Buffer Layer[J]. JOURNAL OF ELECTRONIC MATERIALS,2012,41(3):471. |
| APA | Chen, Y.,Jiang, Y.,Xu, PQ.,Ma, ZG.,Wang, XL.,...&Chen, H.(2012).Improvement of Breakdown Characteristics of a GaN HEMT with AlGaN Buffer Layer.JOURNAL OF ELECTRONIC MATERIALS,41(3),471. |
| MLA | Chen, Y,et al."Improvement of Breakdown Characteristics of a GaN HEMT with AlGaN Buffer Layer".JOURNAL OF ELECTRONIC MATERIALS 41.3(2012):471. |
入库方式： OAI收割
来源：物理研究所
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