Improvement of reproducible resistance switching in polycrystalline tungsten oxide films by in situ oxygen annealing
文献类型：期刊论文
| 作者 | Shang, DS ; Shi, L ; Sun, JR ; Shen, BG ; Zhuge, F ; Li, RW ; Zhao, YG |
| 刊名 | APPLIED PHYSICS LETTERS
 |
| 出版日期 | 2010 |
| 卷号 | 96期号:7 |
| 关键词 | WO3 THIN-FILM NONVOLATILE MEMORY GAS SENSORS SURFACES |
| ISSN号 | 0003-6951 |
| 通讯作者 | Shang, DS: Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China. |
| 中文摘要 | The electric-field-induced resistance switching in polycrystalline tungsten oxide films was investigated. Compared with the as-deposited film, the film annealed in an oxygen atmosphere shows a more stable switching behavior, a higher low-to-high resistance ratio, and a better endurance and retention. Based on the x-ray photoemission spectroscopy analysis, the resistance switching was attributed to the change in the interfacial barrier potential, due to the electron trapping/detrapping in the surface states, and the switching improvement was attributed to the decrease in the surface density of states. The present work suggests a possible approach controlling the resistance switching property by surface modification. |
| 收录类别 | SCI |
| 资助信息 | National Basic Research of China; National Natural Science Foundation of China; Chinese Academy of Sciences; Beijing Municipal Nature Science Foundation |
| 语种 | 英语 |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/39670]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Shang, DS,Shi, L,Sun, JR,et al. Improvement of reproducible resistance switching in polycrystalline tungsten oxide films by in situ oxygen annealing[J]. APPLIED PHYSICS LETTERS,2010,96(7). |
| APA | Shang, DS.,Shi, L.,Sun, JR.,Shen, BG.,Zhuge, F.,...&Zhao, YG.(2010).Improvement of reproducible resistance switching in polycrystalline tungsten oxide films by in situ oxygen annealing.APPLIED PHYSICS LETTERS,96(7). |
| MLA | Shang, DS,et al."Improvement of reproducible resistance switching in polycrystalline tungsten oxide films by in situ oxygen annealing".APPLIED PHYSICS LETTERS 96.7(2010). |
入库方式： OAI收割
来源：物理研究所
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