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Improving performance of resonant tunneling devices in asymmetric structures

文献类型:期刊论文

作者Shi, JJ ; Sanders, BC ; Pan, SH ; Goldys, EM
刊名PHYSICA E
出版日期2001
卷号10期号:4页码:535
关键词DOUBLE-BARRIER STRUCTURES MULTIPLE-VALUED LOGIC PHONON-EMISSION MAGNETIC-FIELD DIODES SCATTERING HETEROSTRUCTURES COMPLEXITY MODES
ISSN号1386-9477
通讯作者Shi, JJ: Hong Kong Univ Sci & Technol, Dept Phys, Kowloon, Hong Kong, Peoples R China.
中文摘要Based on the global coherent tunneling model, we present a self-consistent calculation and show that structural asymmetry of double barrier resonant tunneling structures (DBRTSs) significantly modifies the current-voltage characteristics compared to the symmetric structures. Within the framework of the dielectric continuum model, we further investigate the phonon-assisted tunneling (PAT) current in symmetric and asymmetric DBRTSs. Both the interface modes and the confined bulk-like longitudinal-optical phonons are considered. The results indicate that the four higher-frequency interface phonon modes (especially the one which has the largest electron-phonon interaction at either interface of the emitter barrier) dominate the PAT processes. We show that a suitably designed asymmetric structure can produce much larger peak current and absolute value of the negative differential conductivity than its commonly used symmetric counterpart. (C) 2001 Elsevier Science B.V. All rights reserved.
收录类别SCI
语种英语
公开日期2013-09-17
源URL[http://ir.iphy.ac.cn/handle/311004/39676]  
专题物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
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GB/T 7714
Shi, JJ,Sanders, BC,Pan, SH,et al. Improving performance of resonant tunneling devices in asymmetric structures[J]. PHYSICA E,2001,10(4):535.
APA Shi, JJ,Sanders, BC,Pan, SH,&Goldys, EM.(2001).Improving performance of resonant tunneling devices in asymmetric structures.PHYSICA E,10(4),535.
MLA Shi, JJ,et al."Improving performance of resonant tunneling devices in asymmetric structures".PHYSICA E 10.4(2001):535.

入库方式: OAI收割

来源:物理研究所

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