In situ reflection high-energy electron diffraction observation of epitaxial LaNiO3 thin films
文献类型：期刊论文
| 作者 | Chen, P ; Xu, SY ; Zhou, WZ ; Ong, CK ; Cui, DF |
| 刊名 | JOURNAL OF APPLIED PHYSICS
 |
| 出版日期 | 1999 |
| 卷号 | 85期号:5页码:3000 |
| 关键词 | PULSED-LASER DEPOSITION FERROELECTRIC PROPERTIES O HETEROSTRUCTURES GROWTH |
| ISSN号 | 0021-8979 |
| 通讯作者 | Chen, P: Natl Univ Singapore, Dept Phys, Kent Ridge, Singapore 119260, Singapore. |
| 中文摘要 | Epitaxial LaNiO3 (LNO) thin films were grown on (001) SrTiO3 substrates by laser molecular-beam epitaxy. The growth process of the LNO films was monitored by in situ reflection high-energy electron diffraction (RHEED). Clear RHEED patterns and the intensity oscillation of RHEED were observed during the epitaxial growth process. The morphology of the films was studied by atomic force microscopy. The results show that the films grown by this method have a nanoscale smooth surface with the root-mean-square surface roughness smaller than 7 nm on an area of 1 X 1 mu m(2). X-ray diffraction patterns indicate that the crystalline LNO films exhibited preferred (00l) orientation. The resistivity of the thin film is 0.28 m Ohm cm at 278 K and 0.06 m Ohm cm at 80 K, respectively. (C) 1999 American Institute of Physics. [S0021-8979(99)00105-X]. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/39713]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Chen, P,Xu, SY,Zhou, WZ,et al. In situ reflection high-energy electron diffraction observation of epitaxial LaNiO3 thin films[J]. JOURNAL OF APPLIED PHYSICS,1999,85(5):3000. |
| APA | Chen, P,Xu, SY,Zhou, WZ,Ong, CK,&Cui, DF.(1999).In situ reflection high-energy electron diffraction observation of epitaxial LaNiO3 thin films.JOURNAL OF APPLIED PHYSICS,85(5),3000. |
| MLA | Chen, P,et al."In situ reflection high-energy electron diffraction observation of epitaxial LaNiO3 thin films".JOURNAL OF APPLIED PHYSICS 85.5(1999):3000. |
入库方式： OAI收割
来源：物理研究所
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