In situ revelation of a zinc-blende InN wetting layer during Stranski-Krastanov growth on GaN(0001) by molecular-beam epitaxy
文献类型：期刊论文
| 作者 | Cao, YG ; Xu, SH ; Lu, W ; Dai, XQ ; Chan, YF ; Wang, N ; Liu, Y ; Wu, HS ; Xie, MH ; Tong, SY |
| 刊名 | PHYSICAL REVIEW B
 |
| 出版日期 | 2005 |
| 卷号 | 71期号:15 |
| 关键词 | TOTAL-ENERGY CALCULATIONS FUNDAMENTAL-BAND GAP WAVE BASIS-SET ELASTIC-CONSTANTS METALS GAAS ALN |
| ISSN号 | 1098-0121 |
| 通讯作者 | Xie, MH: Univ Hong Kong, Dept Phys, Pokfulam Rd, Hong Kong, Hong Kong, Peoples R China. |
| 中文摘要 | Indium nitride (InN) exists in two different structural phases, the equilibrium wurtzite (w) and the metastable zinc-blende (zb) phases. It is of scientific interest and practical relevance to examine the crystal structure of the epifilms during growth. In this paper, we use Patterson function inversion of low-energy electron diffraction I-V curves to reveal the preferential formation of zinc-blende InN wetting layer during the Stranski-Krastanov growth on GaN(0001). For three-dimensional islands nucleated afterwards on top of the wetting layer and for thick InN films, the equilibrium wurtzite structure is observed instead. This in situ revelation of the InN lattice structure is confirmed by ex situ transmission electron microscopy studies. Finally, the formation of zb-InN layer on w-GaN is explained in terms of the strain in the system. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/39714]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Cao, YG,Xu, SH,Lu, W,et al. In situ revelation of a zinc-blende InN wetting layer during Stranski-Krastanov growth on GaN(0001) by molecular-beam epitaxy[J]. PHYSICAL REVIEW B,2005,71(15). |
| APA | Cao, YG.,Xu, SH.,Lu, W.,Dai, XQ.,Chan, YF.,...&Tong, SY.(2005).In situ revelation of a zinc-blende InN wetting layer during Stranski-Krastanov growth on GaN(0001) by molecular-beam epitaxy.PHYSICAL REVIEW B,71(15). |
| MLA | Cao, YG,et al."In situ revelation of a zinc-blende InN wetting layer during Stranski-Krastanov growth on GaN(0001) by molecular-beam epitaxy".PHYSICAL REVIEW B 71.15(2005). |
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来源：物理研究所
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