In situ STM investigation of Ge nanostructures with and without Sb on graphite
文献类型：期刊论文
| 作者 | Kushvaha, SS ; Yan, ZJ ; Xu, MJ ; Xiao, WD ; Wang, XS |
| 刊名 | SURFACE REVIEW AND LETTERS
 |
| 出版日期 | 2006 |
| 卷号 | 13期号:2-3页码:241 |
| 关键词 | SURFACTANT-MEDIATED EPITAXY QUANTUM DOTS GROWTH SILICON NANOWIRES PARTICLES ISLANDS LAYER |
| ISSN号 | 0218-625X |
| 通讯作者 | Wang, XS: Natl Univ Singapore, Dept Phys, 2 Sci Dr 3, Singapore 117542, Singapore. |
| 中文摘要 | Germanium was deposited onto highly oriented pyrolytic graphite (HOPG) with and without antimony in ultra-high vacuum. The surface morphology was analyzed using in situ scanning tunneling microscopy (STM) at room temperature (RT). The film grows exclusively in 3D island mode and was affected significantly by substrate defects. At initial stage, nucleation of cluster occurred at step edges and defect sites. Later, we found various types of Ge nanostructures on HOPG in different deposition conditions and stages, including cluster chains, cluster islands, nanowires, and double layer ramified islands at RT. Compact Ge islands were observed when depositing at a substrate temperature of 450 K or after an annealing at 600 K following RT deposition. In addition, the pre-deposited Sb on graphite enhances the sticking probability and suppresses the surface diffusion of Ge atoms, resulting in a significant increase in Ge cluster island density on HOPG terraces. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/39716]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Kushvaha, SS,Yan, ZJ,Xu, MJ,et al. In situ STM investigation of Ge nanostructures with and without Sb on graphite[J]. SURFACE REVIEW AND LETTERS,2006,13(2-3):241. |
| APA | Kushvaha, SS,Yan, ZJ,Xu, MJ,Xiao, WD,&Wang, XS.(2006).In situ STM investigation of Ge nanostructures with and without Sb on graphite.SURFACE REVIEW AND LETTERS,13(2-3),241. |
| MLA | Kushvaha, SS,et al."In situ STM investigation of Ge nanostructures with and without Sb on graphite".SURFACE REVIEW AND LETTERS 13.2-3(2006):241. |
入库方式： OAI收割
来源：物理研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。