In situ TEM studies of oxygen vacancy migration for electrically induced resistance change effect in cerium oxides
文献类型：期刊论文
| 作者 | Gao, P ; Wang, ZZ ; Fu, WY ; Liao, ZL ; Liu, KH ; Wang, WL ; Bai, XD ; Wang, E |
| 刊名 | MICRON
 |
| 出版日期 | 2010 |
| 卷号 | 41期号:4页码:301 |
| 关键词 | INTERFACE MEMORY SRTIO3 FILMS CEO2 |
| ISSN号 | 0968-4328 |
| 通讯作者 | Bai, XD: Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, 83rd S ST Zhongguancan, Beijing 100190, Peoples R China. |
| 中文摘要 | Oxide materials with resistance hysteresis are very promising for next generation memory devices. However, the microscopic dynamic process of the resistance change is still elusive. Here, we use in situ transmission electron microscopy method to study the role of oxygen vacancies for the resistance switching effect in cerium oxides. The structure change during oxygen vacancy migration in CeO(2) induced by electric field was in situ imaged inside high-resolution transmission electron microscope, which gives a direct evidence for oxygen migration mechanism for the microscopic origin of resistance change effect in CeO(2). Our results have implications for understanding the nature of resistance change in metal oxides with mixed valence cations, such as fluorite, rutile and perovskite oxides. (C) 2009 Elsevier Ltd. All rights reserved. |
| 收录类别 | SCI |
| 资助信息 | NSF [60621091, 50725209, 10874218]; MOST of China [2006AA03Z402, 2007AA03Z353, 2007CB936203]; CAS of China |
| 语种 | 英语 |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/39723]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Gao, P,Wang, ZZ,Fu, WY,et al. In situ TEM studies of oxygen vacancy migration for electrically induced resistance change effect in cerium oxides[J]. MICRON,2010,41(4):301. |
| APA | Gao, P.,Wang, ZZ.,Fu, WY.,Liao, ZL.,Liu, KH.,...&Wang, E.(2010).In situ TEM studies of oxygen vacancy migration for electrically induced resistance change effect in cerium oxides.MICRON,41(4),301. |
| MLA | Gao, P,et al."In situ TEM studies of oxygen vacancy migration for electrically induced resistance change effect in cerium oxides".MICRON 41.4(2010):301. |
入库方式： OAI收割
来源：物理研究所
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