Incorporation behaviour of arsenic and phosphorus in GaAsP/GaAs grown by solid source molecular beam epitaxy with a GaP decomposition source
文献类型：期刊论文
| 作者 | Wu, SD ; Guo, LW ; Wang, WX ; Li, ZH ; Niu, PJ ; Huang, Q ; Zhou, JM |
| 刊名 | CHINESE PHYSICS LETTERS
 |
| 出版日期 | 2005 |
| 卷号 | 22期号:4页码:960 |
| 关键词 | CRACKER CELL EQUIVALENT PRESSURE SURFACE MIGRATION GAINASP |
| ISSN号 | 0256-307X |
| 通讯作者 | Wu, SD: Chinese Acad Sci, Inst Phys, POB 603, Beijing 100080, Peoples R China. |
| 中文摘要 | The incorporation behaviour of arsenic and phosphorus in the GaAsP ternary alloy under phosphorus-rich conditions is studied based on the incorporation coefficient model and the growth diffusion model combined with the alloy composition data obtained by high resolution x-ray diffraction analysis. It is found that As adatoms have longer surface lifetime and longer migration length than those of P adatoms, which leads to an arsenic incorporation efficiency much higher than that of phosphorous. With the increase of arsenic flux, the surface lifetime of arsenic adatoms decreases due to the competition of As adatoms. The detailed analysis and discussion are given here. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/39752]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Wu, SD,Guo, LW,Wang, WX,et al. Incorporation behaviour of arsenic and phosphorus in GaAsP/GaAs grown by solid source molecular beam epitaxy with a GaP decomposition source[J]. CHINESE PHYSICS LETTERS,2005,22(4):960. |
| APA | Wu, SD.,Guo, LW.,Wang, WX.,Li, ZH.,Niu, PJ.,...&Zhou, JM.(2005).Incorporation behaviour of arsenic and phosphorus in GaAsP/GaAs grown by solid source molecular beam epitaxy with a GaP decomposition source.CHINESE PHYSICS LETTERS,22(4),960. |
| MLA | Wu, SD,et al."Incorporation behaviour of arsenic and phosphorus in GaAsP/GaAs grown by solid source molecular beam epitaxy with a GaP decomposition source".CHINESE PHYSICS LETTERS 22.4(2005):960. |
入库方式： OAI收割
来源：物理研究所
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