In-doped SrTiO3 ceramic thin films
文献类型：期刊论文
| 作者 | Dai, SY ; Lu, HB ; Chen, F ; Chen, ZH ; Ren, ZY ; Ng, DHL |
| 刊名 | APPLIED PHYSICS LETTERS
 |
| 出版日期 | 2002 |
| 卷号 | 80期号:19页码:3545 |
| 关键词 | MOLECULAR-BEAM EPITAXY ELECTRONIC-STRUCTURE STRONTIUM-TITANATE SPECTROSCOPY SURFACE BATIO3 DEPOSITION |
| ISSN号 | 0003-6951 |
| 通讯作者 | Dai, SY: Chinese Acad Sci, Inst Phys, POB 603, Beijing 100080, Peoples R China. |
| 中文摘要 | We report the characterization of the ceramic SrIn0.1Ti0.9O3 thin film grown by laser molecular-beam epitaxy. The lattice constant is determined to be 0.3948 nm, slightly larger than that of the SrTiO3 substrate. Hall measurement confirms that this film is a p-type semiconductor either below 92 K or above 158 K. X-ray photoemission spectroscopy study shows that the width of the valence band of the p-type SrIn0.1Ti0.9O3 film is narrower than that of the n-type SrNb0.1Ti0.9O3 film. There is a 0.35 eV difference in the Fermi energy level of the two films. The electronic state of the surface layer of the SrIn0.1Ti0.9O3 film is found to be different from that of its interior. (C) 2002 American Institute of Physics. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/39767]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Dai, SY,Lu, HB,Chen, F,et al. In-doped SrTiO3 ceramic thin films[J]. APPLIED PHYSICS LETTERS,2002,80(19):3545. |
| APA | Dai, SY,Lu, HB,Chen, F,Chen, ZH,Ren, ZY,&Ng, DHL.(2002).In-doped SrTiO3 ceramic thin films.APPLIED PHYSICS LETTERS,80(19),3545. |
| MLA | Dai, SY,et al."In-doped SrTiO3 ceramic thin films".APPLIED PHYSICS LETTERS 80.19(2002):3545. |
入库方式： OAI收割
来源：物理研究所
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