Influence of annealing on the magneto-resistance effect and microstructure in the two-step oxidized FeCo/AlOx/Co tunnel junction
文献类型：期刊论文
| 作者 | You, B ; Sheng, WT ; Sun, L ; Zhang, W ; Du, J ; Lu, M ; Zhai, HR ; Hu, A ; Xu, QY ; Wang, YG ; Zhang, Z |
| 刊名 | JOURNAL OF PHYSICS D-APPLIED PHYSICS
 |
| 出版日期 | 2003 |
| 卷号 | 36期号:19页码:2313 |
| 关键词 | THERMAL-STABILITY |
| ISSN号 | 0022-3727 |
| 通讯作者 | You, B: Nanjing Univ, Dept Phys, Nanjing 210093, Peoples R China. |
| 中文摘要 | The FeCo/AlOx/Co magnetic tunnel junction was fabricated using a two-step plasma oxidation technique. The tunnelling magneto-resistance ratio of the junction as-deposited was about 8.5%, and reached 14.0% after annealing at 200 degreesC. Transmission electron microscopy, high-resolution electron microscopy and electron holography were used to study the microstructure of the junction. The enhancement of the magneto-resistance effect after annealing could be attributed to the uniformity of the barrier layer, the improvement of FM/I interfaces, and the deoxidization of the bottom ferromagnetic electrode. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/39784]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | You, B,Sheng, WT,Sun, L,et al. Influence of annealing on the magneto-resistance effect and microstructure in the two-step oxidized FeCo/AlOx/Co tunnel junction[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS,2003,36(19):2313. |
| APA | You, B.,Sheng, WT.,Sun, L.,Zhang, W.,Du, J.,...&Zhang, Z.(2003).Influence of annealing on the magneto-resistance effect and microstructure in the two-step oxidized FeCo/AlOx/Co tunnel junction.JOURNAL OF PHYSICS D-APPLIED PHYSICS,36(19),2313. |
| MLA | You, B,et al."Influence of annealing on the magneto-resistance effect and microstructure in the two-step oxidized FeCo/AlOx/Co tunnel junction".JOURNAL OF PHYSICS D-APPLIED PHYSICS 36.19(2003):2313. |
入库方式： OAI收割
来源：物理研究所
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