Influence of Ce doping on leakage current in Ba0.5Sr0.5TiO3 films
文献类型：期刊论文
| 作者 | Wang, SY ; Cheng, BL ; Wang, C ; Redfern, SAT ; Dai, SY ; Jin, KJ ; Lu, HB ; Zhou, YL ; Chen, ZH ; Yang, GZ |
| 刊名 | JOURNAL OF PHYSICS D-APPLIED PHYSICS
 |
| 出版日期 | 2005 |
| 卷号 | 38期号:13页码:2253 |
| 关键词 | (BA ELECTRICAL-PROPERTIES INTERFACE SR)TIO3 THIN-FILMS |
| ISSN号 | 0022-3727 |
| 通讯作者 | Cheng, BL: Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100080, Peoples R China. |
| 中文摘要 | Undoped and Ce-doped Ba0.5Sr0.5TiO3 (BST) thin films were prepared by pulsed-laser deposition onto a Nb-doped SrTiO3 (STON) substrate. The Cc concentration, ranging from 0.5 to 1.0 at.%, was found to have a strong influence on the electric properties of films at room temperature. We find that, with a positively biased Pt electrode, the leakage current controlled by BST/STON interface can be described by a space-charge-limited-current model. When the Pt electrode is negatively biased, the leakage current controlled by the BST/Pt interface can be explained by the Schottky emission mechanism. In both cases the Ce-doped BST thin films exhibited a lower leakage current (1.2 x 10(-4) and 5.0 x 10(-5) versus 3.4 x 10(-2) A cm(-2) at 450 kV cm(-1); 4.0 x 10(-4) and 4.0 x 10(-5) versus 6.2 x 10(-3) A cm(-2) at -450 kV cm(-1)) than undoped BST films. The reduction of the leakage current is ascribed to the effect of acceptor Ce3+ doping, determined by x-ray photoelectron spectroscopy measurement. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/39794]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Wang, SY,Cheng, BL,Wang, C,et al. Influence of Ce doping on leakage current in Ba0.5Sr0.5TiO3 films[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS,2005,38(13):2253. |
| APA | Wang, SY.,Cheng, BL.,Wang, C.,Redfern, SAT.,Dai, SY.,...&Yang, GZ.(2005).Influence of Ce doping on leakage current in Ba0.5Sr0.5TiO3 films.JOURNAL OF PHYSICS D-APPLIED PHYSICS,38(13),2253. |
| MLA | Wang, SY,et al."Influence of Ce doping on leakage current in Ba0.5Sr0.5TiO3 films".JOURNAL OF PHYSICS D-APPLIED PHYSICS 38.13(2005):2253. |
入库方式： OAI收割
来源：物理研究所
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