Influence of doping on the Mott metal-insulator transition in infinite dimensions
文献类型：期刊论文
| 作者 | Tong, NH |
| 刊名 | COMMUNICATIONS IN THEORETICAL PHYSICS
 |
| 出版日期 | 2002 |
| 卷号 | 37期号:5页码:615 |
| 关键词 | FERMI-LIQUID THEORY HUBBARD-MODEL SUPERCONDUCTIVITY SYSTEMS BREAKDOWN STATE |
| ISSN号 | 0253-6102 |
| 通讯作者 | Tong, NH: Chinese Acad Sci, Inst Phys, State Key Lab Magnetism, POB 603-12, Beijing 100080, Peoples R China. |
| 中文摘要 | We have studied the effect of hole-doping on the established scenerio of the first-order Mott metal-insulator transition (MIT) at half-filling using dynamical mean-field theory and exact diagonalization technique. The Mott insulator state is changed into metallic state immediately as holes are doped into the system. The latter is expected to be Fermi liquid. The previously found unanalytical structure of MIT no longer exists for doping as small as 2 percent. We compare our results with that obtained from Gutzwiller approximation. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/39806]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Tong, NH. Influence of doping on the Mott metal-insulator transition in infinite dimensions[J]. COMMUNICATIONS IN THEORETICAL PHYSICS,2002,37(5):615. |
| APA | Tong, NH.(2002).Influence of doping on the Mott metal-insulator transition in infinite dimensions.COMMUNICATIONS IN THEORETICAL PHYSICS,37(5),615. |
| MLA | Tong, NH."Influence of doping on the Mott metal-insulator transition in infinite dimensions".COMMUNICATIONS IN THEORETICAL PHYSICS 37.5(2002):615. |
入库方式： OAI收割
来源：物理研究所
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