Influence of film thickness on the physical properties of manganite heterojunctions
文献类型：期刊论文
| 作者 | Gao, WW ; Sun, XA ; Wang, J ; Shang, DS ; Shen, BG ; Sun, JR |
| 刊名 | JOURNAL OF APPLIED PHYSICS
 |
| 出版日期 | 2011 |
| 卷号 | 109期号:2 |
| 关键词 | SCHOTTKY JUNCTIONS MAGNETIC-FIELD LA0.7SR0.3MNO3 |
| ISSN号 | 0021-8979 |
| 通讯作者 | Gao, WW: Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China. |
| 中文摘要 | Rectifying and photoelectronic properties of the La(0.67)Ba(0.33)MnO(3)/SrTiO(3):Nb junctions with the film thickness from d = 0.5 to 30 nm have been systematically studied. It is found that the electronic transport of the junction is dominated by quantum tunneling or thermoionic emission when film thickness is below or above 1 nm. The rectifying ratio and ideality factor, correspondingly, experience a sudden change as film thickness grows from 0.5 to 1 nm and a smooth variation with film thickness above 1 nm. The threshold film thickness for the establishment of a mature depletion layer is therefore 1 nm. The photoemission properties of the junctions also exhibit a strong dependence on film thickness. As experimentally shown, the photocurrent vanishes in the zero thickness limit, and grows rapidly with the increase in film thickness until d = 6 nm, where a maximal photocurrent of similar to 770 nA/mm(2) under the irradiance of the laser of 5 mW and 532 nm is obtained. After this maximum, an increase-to-decrease turning appears with further increasing film thickness. Taking into account the finite diffusion distance of the photocarriers and the strain-enhanced charge trapping in ultrathin film junctions, a theoretical description that well reproduces the experiment results can be obtained, which reveals the severe depression of finite diffusion distance of the extra carriers on photocurrent. The maximal diffusion distance thus obtained is similar to 3.5 nm. Similar analyses have been performed for the La(0.67)Ca(0.33)MnO(3)/SrTiO(3): Nb junctions, and the corresponding diffusion distance there is similar to 1.5 nm. (c) 2011 American Institute of Physics. [doi: 10.1063/1.3537916] |
| 收录类别 | SCI |
| 资助信息 | National Basic Research of China; National Natural Science Foundation of China; Chinese Academy of Science; Beijing Municipal Nature Science Foundation |
| 语种 | 英语 |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/39816]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Gao, WW,Sun, XA,Wang, J,et al. Influence of film thickness on the physical properties of manganite heterojunctions[J]. JOURNAL OF APPLIED PHYSICS,2011,109(2). |
| APA | Gao, WW,Sun, XA,Wang, J,Shang, DS,Shen, BG,&Sun, JR.(2011).Influence of film thickness on the physical properties of manganite heterojunctions.JOURNAL OF APPLIED PHYSICS,109(2). |
| MLA | Gao, WW,et al."Influence of film thickness on the physical properties of manganite heterojunctions".JOURNAL OF APPLIED PHYSICS 109.2(2011). |
入库方式： OAI收割
来源：物理研究所
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