Influence of plasma gas and postcleaning on the electrical characteristics of plasma-exposed Al/n-Si Schottky diodes
文献类型：期刊论文
| 作者 | Kuroda, T ; Lin, ZD ; Iwakuro, H ; Sato, S |
| 刊名 | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
 |
| 出版日期 | 1997 |
| 卷号 | 15期号:2页码:232 |
| 关键词 | DAMAGE SILICON AR+ |
| 通讯作者 | Kuroda, T: CHINESE ACAD SCI,INST PHYS,STATE KEY LAB SURFACE PHYS,BEIJING 100080,PEOPLES R CHINA. |
| 中文摘要 | The influence of plasma exposure at self-bias voltages less than 200 V on electrical characteristics of Al/n-Si diodes was examined. In particular, the influence of chemical cleaning on the electrical characteristics of plasma-exposed diodes was examined. In Ar, N-2, and O-2 plasma exposure followed by postcleaning the electrical characteristics were the same as that of a nonplasma-exposed diode. The postcleaning treatment removed the damage layer formed during plasma exposure. On the other hand, in the diodes exposed to Hz and H-2-containing plasma followed by the postcleaning treatment, the electrical characteristics was not improved by the postcleaning treatment: the Schottky barrier height increased. The II-incorporated zone was not removed by the postcleaning treatment. (C) 1997 American Vacuum Society. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/39873]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Kuroda, T,Lin, ZD,Iwakuro, H,et al. Influence of plasma gas and postcleaning on the electrical characteristics of plasma-exposed Al/n-Si Schottky diodes[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,1997,15(2):232. |
| APA | Kuroda, T,Lin, ZD,Iwakuro, H,&Sato, S.(1997).Influence of plasma gas and postcleaning on the electrical characteristics of plasma-exposed Al/n-Si Schottky diodes.JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,15(2),232. |
| MLA | Kuroda, T,et al."Influence of plasma gas and postcleaning on the electrical characteristics of plasma-exposed Al/n-Si Schottky diodes".JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 15.2(1997):232. |
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来源：物理研究所
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