中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Influence of roughness and disorder on tunneling magnetoresistance

文献类型:期刊论文

作者Xu, PX ; Karpan, VM ; Xia, K ; Zwierzycki, M ; Marushchenko, I ; Kelly, PJ
刊名PHYSICAL REVIEW B
出版日期2006
卷号73期号:18
关键词SPIN POLARIZATION ROOM-TEMPERATURE JUNCTIONS STATES MODEL
ISSN号1098-0121
通讯作者Xu, PX: Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, POB 603, Beijing 100080, Peoples R China.
中文摘要A systematic, quantitative study of the effect of interface roughness and disorder on the magnetoresistance of FeCo parallel to vacuum parallel to FeCo magnetic tunnel junctions is presented based upon parameter-free electronic structure calculations. Surface roughness is found to have a very strong effect on the spin-polarized transport while that of disorder in the leads (leads consisting of a substitutional alloy) is weaker but still sufficient to suppress the huge tunneling magnetoresistance (TMR) predicted for ideal systems.
收录类别SCI
语种英语
公开日期2013-09-17
源URL[http://ir.iphy.ac.cn/handle/311004/39883]  
专题物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式
GB/T 7714
Xu, PX,Karpan, VM,Xia, K,et al. Influence of roughness and disorder on tunneling magnetoresistance[J]. PHYSICAL REVIEW B,2006,73(18).
APA Xu, PX,Karpan, VM,Xia, K,Zwierzycki, M,Marushchenko, I,&Kelly, PJ.(2006).Influence of roughness and disorder on tunneling magnetoresistance.PHYSICAL REVIEW B,73(18).
MLA Xu, PX,et al."Influence of roughness and disorder on tunneling magnetoresistance".PHYSICAL REVIEW B 73.18(2006).

入库方式: OAI收割

来源:物理研究所

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