Influence of Si doping on optical characteristics of cubic GaN grown on (001) GaAs substrates
文献类型：期刊论文
| 作者 | Li, ZQ ; Chen, H ; Liu, HF ; Wan, L ; Zhang, MH ; Huang, Q ; Zhou, JM ; Yang, N ; Tao, K ; Han, YJ ; Luo, Y |
| 刊名 | APPLIED PHYSICS LETTERS
 |
| 出版日期 | 2000 |
| 卷号 | 76期号:25页码:3765 |
| 关键词 | LIGHT-EMITTING-DIODES DOPED GAN POTENTIAL FLUCTUATION SEMICONDUCTORS |
| ISSN号 | 0003-6951 |
| 通讯作者 | Li, ZQ: Chinese Acad Sci, Inst Phys, POB 603, Beijing 100080, Peoples R China. |
| 中文摘要 | The photoluminescence (PL) properties of Si-doped cubic GaN with different carrier concentrations were investigated at room temperature. The epilayers were grown on GaAs (001) by radio-frequency molecular-beam epitaxy. It was found that when the carrier concentration is increased from 5 x 10(15) to 2 x 10(18) cm(-3), the PL peak shifted towards low energy, from 3.246 to 3.227 eV, and the PL linewidth increased from 77.1 to 121 meV. The PL peak shift is explained by the band gap narrowing effect due to the high doping concentration. The PL linewidth includes two parts: one is doping concentration independent, which is caused by the imperfection of samples and phonon scattering; the other is doping concentration dependent. We assign the second part to the broadening by the microscopic fluctuation of the doping concentration. The experimental measurements are in good agreement with the model. (C) 2000 American Institute of Physics. [S0003-6951(00)03025-4]. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/39887]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Li, ZQ,Chen, H,Liu, HF,et al. Influence of Si doping on optical characteristics of cubic GaN grown on (001) GaAs substrates[J]. APPLIED PHYSICS LETTERS,2000,76(25):3765. |
| APA | Li, ZQ.,Chen, H.,Liu, HF.,Wan, L.,Zhang, MH.,...&Luo, Y.(2000).Influence of Si doping on optical characteristics of cubic GaN grown on (001) GaAs substrates.APPLIED PHYSICS LETTERS,76(25),3765. |
| MLA | Li, ZQ,et al."Influence of Si doping on optical characteristics of cubic GaN grown on (001) GaAs substrates".APPLIED PHYSICS LETTERS 76.25(2000):3765. |
入库方式： OAI收割
来源：物理研究所
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