Influence of the deposition time of barrier layers on optical and structural properties of high-efficiency green-light-emitting InGaN/GaN multiple quantum wells
文献类型：期刊论文
| 作者 | Zheng, XH ; Chen, H ; Yan, ZB ; Li, DS ; Yu, HB ; Huang, Q ; Zhou, JM |
| 刊名 | JOURNAL OF APPLIED PHYSICS
 |
| 出版日期 | 2004 |
| 卷号 | 96期号:4页码:1899 |
| ISSN号 | 0021-8979 |
| 关键词 | GROWTH INTERRUPTION TEMPERATURE PHOTOLUMINESCENCE EMISSION INTERFACE EXCITONS DIODES LOCALIZATION DEPENDENCE THICKNESS |
| 通讯作者 | Zheng, XH: Chinese Acad Sci, Inst Phys, POB 603, Beijing 100080, Peoples R China. |
| 中文摘要 | We reported the effect of the deposition time of barrier layers on optical and structural properties of high-efficiency green-light-emitting InGaN/GaN multiple quantum wells (MQWs) by photoluminescence (PL) and high-resolution x-ray diffraction techniques. The MQW samples on (0001)-plane sapphire substrates were prepared with a ramping method by metalorganic chemical deposition. It was found that the structural or interface quality of the MQW system improved as the deposition time of barrier layers increased from 10 to 14 min, but lattice relaxation was still observed. The relaxation degree decreases from 33% to 6% as the deposition time increases. Temperature-dependent PL measurements from 12 to 300 K indicated that the integrated PL intensities start to decay rapidly as temperature rises above 50 K for the sample with the shorter deposition time, and above 100 K for the sample with the longer deposition time. The luminescence thermal quenching of the two samples suggests the two nonradiative recombination centers based on a fit to Arrhenius plot of the normalized integrated PL intensity over the entire temperature range. The first centers at higher temperatures show less difference for the two samples. The second centers at lower temperatures can be attributed to the trapping of carriers at the rough interface for the sample with the shorter deposition time and to the thermal quenching of bound excitons for the sample with the longer deposition time, respectively. (C) 2004 American Institute of Physics. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/39902]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Zheng, XH,Chen, H,Yan, ZB,et al. Influence of the deposition time of barrier layers on optical and structural properties of high-efficiency green-light-emitting InGaN/GaN multiple quantum wells[J]. JOURNAL OF APPLIED PHYSICS,2004,96(4):1899. |
| APA | Zheng, XH.,Chen, H.,Yan, ZB.,Li, DS.,Yu, HB.,...&Zhou, JM.(2004).Influence of the deposition time of barrier layers on optical and structural properties of high-efficiency green-light-emitting InGaN/GaN multiple quantum wells.JOURNAL OF APPLIED PHYSICS,96(4),1899. |
| MLA | Zheng, XH,et al."Influence of the deposition time of barrier layers on optical and structural properties of high-efficiency green-light-emitting InGaN/GaN multiple quantum wells".JOURNAL OF APPLIED PHYSICS 96.4(2004):1899. |
入库方式： OAI收割
来源：物理研究所
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