Influence of threading dislocations on the near-bandedge photoluminescence of wurtzite GaN thin films on SiC substrate
文献类型：期刊论文
| 作者 | Qiu, XG ; Segawa, Y ; Xue, QK ; Xue, QZ ; Sakurai, T |
| 刊名 | APPLIED PHYSICS LETTERS
 |
| 出版日期 | 2000 |
| 卷号 | 77期号:9页码:1316 |
| 关键词 | CHEMICAL-VAPOR-DEPOSITION ALN BUFFER LAYERS SURFACE EPITAXY MORPHOLOGY DEFECTS YELLOW |
| ISSN号 | 0003-6951 |
| 通讯作者 | Qiu, XG: Inst Phys & Chem Res, Photodynam Res Ctr, Sendai, Miyagi 980, Japan. |
| 中文摘要 | Wurtzite GaN thin films have been grown on the 6H-SiC substrates by plasma-assisted molecular-beam epitaxy. The correlation between crystalline structure and photoluminescence (PL) properties is examined by high-resolution x-ray diffraction and PL measured at different temperatures from 5 to 300 K. At 5 K, the PL spectrum is dominated by two near-bandedge emissions at 3.470 and 3.427 eV. At room temperature, a broad yellow luminescence (YL) centered at 2.16 eV is present in the PL spectrum. The intensities of both the 3.427 eV peak and the YL are found to be strongly related to the threading-dislocation density of the GaN epilayers. (C) 2000 American Institute of Physics. [S0003-6951(00)01035-4]. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-18 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/39919]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Qiu, XG,Segawa, Y,Xue, QK,et al. Influence of threading dislocations on the near-bandedge photoluminescence of wurtzite GaN thin films on SiC substrate[J]. APPLIED PHYSICS LETTERS,2000,77(9):1316. |
| APA | Qiu, XG,Segawa, Y,Xue, QK,Xue, QZ,&Sakurai, T.(2000).Influence of threading dislocations on the near-bandedge photoluminescence of wurtzite GaN thin films on SiC substrate.APPLIED PHYSICS LETTERS,77(9),1316. |
| MLA | Qiu, XG,et al."Influence of threading dislocations on the near-bandedge photoluminescence of wurtzite GaN thin films on SiC substrate".APPLIED PHYSICS LETTERS 77.9(2000):1316. |
入库方式： OAI收割
来源：物理研究所
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