InGaN quantum dot photodetectors
文献类型：期刊论文
| 作者 | Ji, LW ; Su, YK ; Chang, SJ ; Liu, SH ; Wang, CK ; Tsai, ST ; Fang, TH ; Wu, LW ; Xue, QK |
| 刊名 | SOLID-STATE ELECTRONICS
 |
| 出版日期 | 2003 |
| 卷号 | 47期号:10页码:1753 |
| 关键词 | LIGHT-EMITTING-DIODES ULTRAVIOLET PHOTODETECTORS WELL BLUE GAN SI CONTACTS EMISSION GROWTH NOISE LASER |
| ISSN号 | 0038-1101 |
| 通讯作者 | Chang, SJ: Natl Cheng Kung Univ, Inst Microelect, Dept Elect Engn, Tainan 701, Taiwan. |
| 中文摘要 | Nanometer-scale InGaN self-assembled quantum dots (QDs) have been prepared by growth stop during the metal-organic chemical vapor deposition growth. With a 12 s growth interruption, We Successfully formed InGaN QDs with a typical lateral size of 25 nm and an average height of 4.1 nm. The QDs density was about 2 x 10(10) cm(-2). Nitride-based QD metal-semiconductor-metal (MSM) photodetectors were also fabricated. It wits found that We Could significantly enhance the photocurrent to dark current contrast ratio of the MSM photodetectors by the use of QD Structure. (C) 2003 Elsevier Ltd. All rights reserved. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-18 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/39983]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Ji, LW,Su, YK,Chang, SJ,et al. InGaN quantum dot photodetectors[J]. SOLID-STATE ELECTRONICS,2003,47(10):1753. |
| APA | Ji, LW.,Su, YK.,Chang, SJ.,Liu, SH.,Wang, CK.,...&Xue, QK.(2003).InGaN quantum dot photodetectors.SOLID-STATE ELECTRONICS,47(10),1753. |
| MLA | Ji, LW,et al."InGaN quantum dot photodetectors".SOLID-STATE ELECTRONICS 47.10(2003):1753. |
入库方式： OAI收割
来源：物理研究所
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