InGaN/GaN based light-emitting diodes grown on maskless periodically grooved sapphire fabricated by wet chemical etching
文献类型：期刊论文
| 作者 | Yu, NS ; Zhu, XL ; Peng, MZ ; Xing, ZG ; Zhou, JM |
| 刊名 | JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS
 |
| 出版日期 | 2011 |
| 卷号 | 13期号:9-10页码:1203 |
| 关键词 | EPITAXIAL LATERAL OVERGROWTH VAPOR-PHASE EPITAXY GAN MICROSCOPY DEPOSITION DEFECTS SINGLE |
| ISSN号 | 1454-4164 |
| 通讯作者 | Yu, NS: Dalian Nationalities Univ, Sch Math & Phys, Inst Optoelect Technol, Dalian 116600, Peoples R China. |
| 中文摘要 | The interaction between two counter-streaming laser-produced plasmas is investigated using the high-power Shenguang II laser facility. The shockwaves observed in our experiment are believed to be excited by collisionless mechanisms. The dimensionless parameters calculated with the results suggest that it is possible to scale the observation to the supernova remnants using transformation and similarity criteria. |
| 收录类别 | SCI |
| 资助信息 | Fundamental Research Funds for the Central Universities [DC 10030107]; National Natural Science Foundation of China [51102036] |
| 语种 | 英语 |
| 公开日期 | 2013-09-18 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/39984]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Yu, NS,Zhu, XL,Peng, MZ,et al. InGaN/GaN based light-emitting diodes grown on maskless periodically grooved sapphire fabricated by wet chemical etching[J]. JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS,2011,13(9-10):1203. |
| APA | Yu, NS,Zhu, XL,Peng, MZ,Xing, ZG,&Zhou, JM.(2011).InGaN/GaN based light-emitting diodes grown on maskless periodically grooved sapphire fabricated by wet chemical etching.JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS,13(9-10),1203. |
| MLA | Yu, NS,et al."InGaN/GaN based light-emitting diodes grown on maskless periodically grooved sapphire fabricated by wet chemical etching".JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS 13.9-10(2011):1203. |
入库方式： OAI收割
来源：物理研究所
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