InGaN/GaN multi-quantum dot light-emitting diodes
文献类型：期刊论文
| 作者 | Ji, LW ; Su, YK ; Chang, ST ; Chang, CS ; Wu, LW ; Lai, WC ; Du, XL ; Chen, H |
| 刊名 | JOURNAL OF CRYSTAL GROWTH
 |
| 出版日期 | 2004 |
| 卷号 | 263期号:1-4页码:114 |
| 关键词 | ASSEMBLED QUANTUM DOTS MOLECULAR-BEAM EPITAXY WELL BLUE GAN LASER SEMICONDUCTORS EMISSION ISLANDS GROWTH |
| ISSN号 | 0022-0248 |
| 通讯作者 | Ji, LW: Natl Cheng Kung Univ, Inst Microelect, Dept Elect Engn, Tainan 701, Taiwan. |
| 中文摘要 | It has been demonstrated that InGaN/GaN blue light-emitting diodes (LEDs) with multiple quantum dot (MQD) were successfully fabricated by metal-organic chemical vapor deposition. We have formed nanoscale InGaN self-assembled QDs in the well layers of the active region with a typical 3-nm height and 10-nm lateral dimension. With a 20-mA DC injection current, the forward voltage was 3.1 and 3.5 V for MQD LED and conventional nitride-based multi-quantum well (MQW) LED with the same structure, respectively. It was also found that EL peak position of the MQD LED is more sensitive to the amount of injection current, as compared to the conventional MQW LEDs. (C) 2003 Elsevier B.V. All rights reserved. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-18 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/39985]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Ji, LW,Su, YK,Chang, ST,et al. InGaN/GaN multi-quantum dot light-emitting diodes[J]. JOURNAL OF CRYSTAL GROWTH,2004,263(1-4):114. |
| APA | Ji, LW.,Su, YK.,Chang, ST.,Chang, CS.,Wu, LW.,...&Chen, H.(2004).InGaN/GaN multi-quantum dot light-emitting diodes.JOURNAL OF CRYSTAL GROWTH,263(1-4),114. |
| MLA | Ji, LW,et al."InGaN/GaN multi-quantum dot light-emitting diodes".JOURNAL OF CRYSTAL GROWTH 263.1-4(2004):114. |
入库方式： OAI收割
来源：物理研究所
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