InGaP/GaAs heterojunction bipolar transistor grown by solid-source molecular beam epitaxy with a GaP decomposition source
文献类型：期刊论文
| 作者 | Shang, XZ ; Niu, PJ ; Mao, BN ; Wang, WX ; Guo, LW ; Huang, Q ; Zhou, JM |
| 刊名 | SOLID STATE COMMUNICATIONS
 |
| 出版日期 | 2006 |
| 卷号 | 138期号:3页码:114 |
| 关键词 | VAPOR-PHASE EPITAXY SINGLE ENERGY |
| ISSN号 | 0038-1098 |
| 通讯作者 | Shang, XZ: Wuhan Univ, Sch Phys & Technol, Wuhan 430072, Peoples R China. |
| 中文摘要 | Lattice-matched InGaP epilayers on GaAs (001) and InGaP/GaAs heterojunction bipolar transistors (HBTs) were successfully grown by solid-source molecular beam epitaxy (SSMBE) with a GaP decomposition source. A 3 mu m thick InGaP epilayer shows that low temperature photoluminescence (PL) peak energy is as large as 1.998 eV, full width at half maximum (FWHM) is 5.26 meV, which is the smallest ever reported, and X-ray diffraction (XRD) rocking curve linewidth is as narrow as that of GaAs substrate. The electron mobilities at room temperature of nominally undoped InGaP layers obtained by Hall measurements are comparable to similar InGaP epilayer grown by solid-source molecular beam epitaxy (SSMBE) with other sources or other growth techniques. The large area InGaP/GaAs HBTs show very good Dc characteristics. (c) 2006 Elsevier Ltd. All fights reserved. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-18 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/39988]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Shang, XZ,Niu, PJ,Mao, BN,et al. InGaP/GaAs heterojunction bipolar transistor grown by solid-source molecular beam epitaxy with a GaP decomposition source[J]. SOLID STATE COMMUNICATIONS,2006,138(3):114. |
| APA | Shang, XZ.,Niu, PJ.,Mao, BN.,Wang, WX.,Guo, LW.,...&Zhou, JM.(2006).InGaP/GaAs heterojunction bipolar transistor grown by solid-source molecular beam epitaxy with a GaP decomposition source.SOLID STATE COMMUNICATIONS,138(3),114. |
| MLA | Shang, XZ,et al."InGaP/GaAs heterojunction bipolar transistor grown by solid-source molecular beam epitaxy with a GaP decomposition source".SOLID STATE COMMUNICATIONS 138.3(2006):114. |
入库方式： OAI收割
来源：物理研究所
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