Initial oxidation and interfacial diffusion of Zn on faceted MgO(111) films
文献类型：期刊论文
| 作者 | Xue, MS ; Guo, QL ; Wu, KH ; Guo, JD |
| 刊名 | LANGMUIR
 |
| 出版日期 | 2008 |
| 卷号 | 24期号:16页码:8760 |
| 关键词 | ZINC-OXIDE PHOTOELECTRON-SPECTROSCOPY MGO BUFFER SURFACES GROWTH SILVER AL2O3(0001) OVERLAYERS ALLOYS STATES |
| ISSN号 | 0743-7463 |
| 通讯作者 | Guo, QL: Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Inst Phys, POB 603, Beijing 100190, Peoples R China. |
| 中文摘要 | The interaction of zinc and faceted MgO(111) thin films prepared on a Mo(110) substrate was investigated in situ by using various surface analysis techniques, including X-ray photoelectron spectroscopy, ultraviolet photoelectron spectroscopy, Auger electron spectroscopy, high-resolution electron energy loss spectroscopy, and low-energy electron diffraction. The results revealed that three-dimensional Zn islands exist on the faceted MgO(111) films and that no chemical interaction takes place at the interface at room temperature. Initially, deposited Zn is stable at temperatures below 400 K and diffuses into MgO at temperatures above 425 K. A portion of Zn is oxidized at similar to 10(-6) mbar O(2) at room temperature. An interfacial phase of Zn(x)Mg(1-x)O was formed after Zn was exposed to similar to 10(-6) mbar O(2) at temperatures >= 500 K. The faceted structure on the MgO(111) surface is of a disadvantage for the epitaxial growth of ZnO films. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-18 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/39996]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Xue, MS,Guo, QL,Wu, KH,et al. Initial oxidation and interfacial diffusion of Zn on faceted MgO(111) films[J]. LANGMUIR,2008,24(16):8760. |
| APA | Xue, MS,Guo, QL,Wu, KH,&Guo, JD.(2008).Initial oxidation and interfacial diffusion of Zn on faceted MgO(111) films.LANGMUIR,24(16),8760. |
| MLA | Xue, MS,et al."Initial oxidation and interfacial diffusion of Zn on faceted MgO(111) films".LANGMUIR 24.16(2008):8760. |
入库方式： OAI收割
来源：物理研究所
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