InN island shape and its dependence on growth condition of molecular-beam epitaxy
文献类型：期刊论文
| 作者 | Cao, YG ; Xie, MH ; Liu, Y ; Ng, YF ; Wu, HS ; Tong, SY |
| 刊名 | APPLIED PHYSICS LETTERS
 |
| 出版日期 | 2003 |
| 卷号 | 83期号:25页码:5157 |
| 关键词 | STRAINED ISLANDS UNSTABLE GROWTH QUANTUM DOTS TRANSITION GAN(0001) SURFACE |
| ISSN号 | 0003-6951 |
| 通讯作者 | Xie, MH: Univ Hong Kong, Dept Phys, Pokfulam Rd, Hong Kong, Hong Kong, Peoples R China. |
| 中文摘要 | During molecular-beam epitaxy of InN films on GaN(0001) surface, three-dimensional (3D) islands are observed following an initial wetting layer formation. Depending on deposition condition, the 3D islands take different shapes. Pyramidal islands form when excess nitrogen fluxes are used, whereas pillar-shaped islands are obtained when excess indium fluxes are employed. The pillar-shaped islands are identified to represent the equilibrium shape, whereas the pyramidal ones are limited by kinetics. As the size of islands increases, their aspect ratio shows a decreasing trend, which is attributed to a gradual relaxation of strain in the layer by defects. (C) 2003 American Institute of Physics. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-18 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/40000]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Cao, YG,Xie, MH,Liu, Y,et al. InN island shape and its dependence on growth condition of molecular-beam epitaxy[J]. APPLIED PHYSICS LETTERS,2003,83(25):5157. |
| APA | Cao, YG,Xie, MH,Liu, Y,Ng, YF,Wu, HS,&Tong, SY.(2003).InN island shape and its dependence on growth condition of molecular-beam epitaxy.APPLIED PHYSICS LETTERS,83(25),5157. |
| MLA | Cao, YG,et al."InN island shape and its dependence on growth condition of molecular-beam epitaxy".APPLIED PHYSICS LETTERS 83.25(2003):5157. |
入库方式： OAI收割
来源：物理研究所
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