In-plane resistivity of La-doped Bi2Sr2CuO6+delta single crystals
文献类型：期刊论文
| 作者 | Si, WD ; Xiong, JW ; Zhao, ZX |
| 刊名 | PHYSICA C
 |
| 出版日期 | 1997 |
| 卷号 | 282页码:1187 |
| 关键词 | SUPERCONDUCTOR-INSULATOR TRANSITION ANISOTROPIC RESISTIVITY THIN-FILMS LA2-XSRXCUO4 MAGNETORESISTANCE TL2BA2CUO6+DELTA |
| ISSN号 | 0921-4534 |
| 通讯作者 | Si, WD: CHINESE ACAD SCI,INST PHYS,NATL LAB SUPERCONDUCT,POB 603,BEIJING 100080,PEOPLES R CHINA. |
| 中文摘要 | The in-plane resistivity (rho(ab)) of series of Bi2Sr2-xLaxCuOy single crystals with the highest T-c(rho=0) up to 23K has been studied between 4.2 similar to 300K over a wide composition range from the underdoped insulator to the overdoped superconductor. The observed superconductor-insulator (ST) transition is consistent with the two dimensional (2D) localization We found for the first time a universal dR(sheet)/dT behavior among all high temperature superconductors (NTS) in the underdoped regime. Due to a possible dimensional crossover, a change in the electronic state with the appearance of normal electrons in the overdoped regime is discussed. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-18 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/40021]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Si, WD,Xiong, JW,Zhao, ZX. In-plane resistivity of La-doped Bi2Sr2CuO6+delta single crystals[J]. PHYSICA C,1997,282:1187. |
| APA | Si, WD,Xiong, JW,&Zhao, ZX.(1997).In-plane resistivity of La-doped Bi2Sr2CuO6+delta single crystals.PHYSICA C,282,1187. |
| MLA | Si, WD,et al."In-plane resistivity of La-doped Bi2Sr2CuO6+delta single crystals".PHYSICA C 282(1997):1187. |
入库方式： OAI收割
来源：物理研究所
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