Insertion of Zn atoms into Cu3N lattice: Structural distortion and modification of electronic properties
文献类型：期刊论文
| 作者 | Gao, L ; Ji, AL ; Zhang, WB ; Cao, ZX |
| 刊名 | JOURNAL OF CRYSTAL GROWTH
 |
| 出版日期 | 2011 |
| 卷号 | 321期号:1页码:157 |
| 关键词 | NITRIDE THIN-FILMS COPPER NITRIDE OPTICAL-PROPERTIES THERMAL-STABILITY RECORDING MEDIA DEPOSITION INCLUSION SILVER CU4N TIN |
| ISSN号 | 0022-0248 |
| 通讯作者 | Ji, AL: Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, POB 603, Beijing 100190, Peoples R China. |
| 中文摘要 | Nanocrystalline Cu3NZnx compound films were synthesized using reactive magnetron sputtering of metal targets. Up to a Zn content of 5.44 at.%, the deposits exhibit a satisfactory crystallinity that the X-ray diffraction patterns show distinct (0 0 1) and (0 0 2) reflections characteristic of the intrinsic Cu3N lattice. The slightly enlarged lattice constant suggests insertion of zinc atoms to the center of cells of primitive Cu3N lattice. All the ternary deposits exhibit an n-typed conductivity. Electrical resistivity at room temperature drops by three orders of magnitude with increasing zinc concentration from 0 to 5.44 at.%, and accordingly the activation energy for electrical conduction decreases from 21.9 to 14.1 meV, indicating the presence of shallow donor levels in doped samples. The electronic transport is governed by thermal activation in lightly doped samples, whereas in samples with a zinc concentration of 5.44 at.% or higher it is instead dominated by a hopping mechanism at low temperatures ( < 50 K). (C) 2011 Elsevier B.V. All rights reserved. |
| 收录类别 | SCI |
| 资助信息 | National Natural Science Foundation of China [10904165, 10675163, 10974227]; Chinese Academy of Sciences [KGCX2-YW-360, KJCX2-YW-20, KJCX2-YW-M07]; National Basic Research Program of China [2009CB930801, 2009AA033101] |
| 语种 | 英语 |
| 公开日期 | 2013-09-18 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/40026]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Gao, L,Ji, AL,Zhang, WB,et al. Insertion of Zn atoms into Cu3N lattice: Structural distortion and modification of electronic properties[J]. JOURNAL OF CRYSTAL GROWTH,2011,321(1):157. |
| APA | Gao, L,Ji, AL,Zhang, WB,&Cao, ZX.(2011).Insertion of Zn atoms into Cu3N lattice: Structural distortion and modification of electronic properties.JOURNAL OF CRYSTAL GROWTH,321(1),157. |
| MLA | Gao, L,et al."Insertion of Zn atoms into Cu3N lattice: Structural distortion and modification of electronic properties".JOURNAL OF CRYSTAL GROWTH 321.1(2011):157. |
入库方式： OAI收割
来源：物理研究所
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