Interaction between an electron and optical phonons in polar semiconductor heterostructures
文献类型：期刊论文
| 作者 | Shi, JJ ; Pan, SH ; Liu, ZX |
| 刊名 | ZEITSCHRIFT FUR PHYSIK B-CONDENSED MATTER
 |
| 出版日期 | 1996 |
| 卷号 | 100期号:3页码:353 |
| 关键词 | QUANTUM-WELLS COLLECTIVE EXCITATIONS SCATTERING RATES DIELECTRIC SLAB LO PHONONS INTERFACE MODES SUPERLATTICES CRYSTALS HETEROJUNCTIONS |
| ISSN号 | 0722-3277 |
| 通讯作者 | Shi, JJ: CHINA CTR ADV SCI & TECHNOL, WORLD LAB, POB 8730, BEIJING 100080, PEOPLES R CHINA. |
| 中文摘要 | Interface phonons and bulk-like longitudinal-optical (LO) phonons and their interaction with an electron are studied for a finite four-layer heterostructure (FFLHS). An analysis of the field eigenvectors shows that, in the vicinity of the Brillouin-zone center, an interface transverse-optical (TO) mode oscillates at the bulk LO frequency, and an interface LO mode oscillates at the bulk TO frequency. Analytic expressions and numerical illustrations for dispersion relations of interface modes and for electron-phonon coupling functions and scattering rates are obtained for finite, semi-infinite and infinite quantum well (QW) structures which are important special cases of an FFLHS. It is shown that the scattering rates depend strongly on the well width of a QW structure, and that interface modes are much more important than bulk LO modes when the well width is small. The calculated results also show that the usual selection rules for intersubband and intrasubband transitions break down in asymmetric heterostructures. Moreover, we have found an interesting result. That is, in comparison with the negligibly small interaction between an electron and the lowest-frequency interface-mode in symmetric single QWs and commonly used step QWs, this interaction may be very large in asymmetric single QWs and general step QWs. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-18 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/40077]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Shi, JJ,Pan, SH,Liu, ZX. Interaction between an electron and optical phonons in polar semiconductor heterostructures[J]. ZEITSCHRIFT FUR PHYSIK B-CONDENSED MATTER,1996,100(3):353. |
| APA | Shi, JJ,Pan, SH,&Liu, ZX.(1996).Interaction between an electron and optical phonons in polar semiconductor heterostructures.ZEITSCHRIFT FUR PHYSIK B-CONDENSED MATTER,100(3),353. |
| MLA | Shi, JJ,et al."Interaction between an electron and optical phonons in polar semiconductor heterostructures".ZEITSCHRIFT FUR PHYSIK B-CONDENSED MATTER 100.3(1996):353. |
入库方式： OAI收割
来源：物理研究所
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