Interface of epitaxial SrTiO3 on silicon characterized by transmission electron microscopy, electron energy loss spectroscopy, and electron holography
文献类型：期刊论文
| 作者 | Tian, HF ; Yang, HX ; Zhang, HR ; Li, Y ; Lu, HB ; Li, JQ |
| 刊名 | PHYSICAL REVIEW B
 |
| 出版日期 | 2006 |
| 卷号 | 73期号:7 |
| 关键词 | THIN-FILMS IN-SITU MAGNETORESISTANCE LA0.7SR0.3MNO3 CHARGE |
| ISSN号 | 1098-0121 |
| 通讯作者 | Li, JQ: Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100080, Peoples R China. |
| 中文摘要 | The interfacial oxygen diffusion during film growth often results in the appearance of a thin SiOx layer in SrTiO3/Si films and related heterojunctions. High-resolution TEM investigations on the La0.9Sr0.1MnO3/SrTiO3/Si(LSMO/STO/Si) heterojunctions suggested that the thickness and microstructure of the SiOx interfacial layer change visibly from one sample to another grown under slightly different conditions. Electron diffraction observations demonstrated the epitaxial relationships in the LSMO/STO/Si heterojunction as [001](LSMO)parallel to[-110](Si), [110](LSMO)parallel to[001](Si) and [001](STO)parallel to[001](Si), [010](STO)parallel to[-110](Si). The electron energy loss spectroscopy analyses on the LSMO/STO/Si interfacial region indicated that the Si ions are in intermediate oxidation states in the amorphous layer and the interfacial Ti bonding changes slightly. Electron holography measurements indicated that the energy barrier between the Si substrate and the LSMO film is about 0.95 +/- 0.16 V, where notable negative charges accumulate in the amorphous SiOx layer. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-18 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/40114]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Tian, HF,Yang, HX,Zhang, HR,et al. Interface of epitaxial SrTiO3 on silicon characterized by transmission electron microscopy, electron energy loss spectroscopy, and electron holography[J]. PHYSICAL REVIEW B,2006,73(7). |
| APA | Tian, HF,Yang, HX,Zhang, HR,Li, Y,Lu, HB,&Li, JQ.(2006).Interface of epitaxial SrTiO3 on silicon characterized by transmission electron microscopy, electron energy loss spectroscopy, and electron holography.PHYSICAL REVIEW B,73(7). |
| MLA | Tian, HF,et al."Interface of epitaxial SrTiO3 on silicon characterized by transmission electron microscopy, electron energy loss spectroscopy, and electron holography".PHYSICAL REVIEW B 73.7(2006). |
入库方式： OAI收割
来源：物理研究所
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