Interfacial control of LaAlO3 films deposited on Si (100) using a thin La-Al-Si-O silicate film as the barrier layer
文献类型:期刊论文
作者 | Xiang, WF ; Liu, YZ ; Lu, HB ; Yan, L ; He, M ; Chen, ZH |
刊名 | THIN SOLID FILMS
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出版日期 | 2006 |
卷号 | 515期号:4页码:2722 |
关键词 | OXIDATION GROWTH OXIDES |
ISSN号 | 0040-6090 |
通讯作者 | Chen, ZH: Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Inst Phys, Beijing 100080, Peoples R China. |
中文摘要 | Amorphous LaAlO3 thin films have been deposited by laser molecular beam epitaxy system on Si substrate with an abrupt interface. The formation of the interface between LaAlO3 and silicon was investigated in detail using high-resolution transmission electron microscopy and Xray photoelectron spectroscopy. When several atomic-thick LaAlO3 film was deposited at low temperature and subsequently annealed at high vacuum, a stable Si-La-Al-O silicate thin layer was formed. Using this very thin film as a buffer layer, LaAlO3 films can be deposited with an atomically defined interface at the high temperature and oxygen pressure conditions. With good understanding of the formation mechanism for the interfacial structure, we can control the interface between high-k oxide and Si substrate via optimized deposition parameters and specific growth sequences. (c) 2006 Elsevier B.V. All rights reserved. |
收录类别 | SCI |
语种 | 英语 |
公开日期 | 2013-09-18 |
源URL | [http://ir.iphy.ac.cn/handle/311004/40133] ![]() |
专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
推荐引用方式 GB/T 7714 | Xiang, WF,Liu, YZ,Lu, HB,et al. Interfacial control of LaAlO3 films deposited on Si (100) using a thin La-Al-Si-O silicate film as the barrier layer[J]. THIN SOLID FILMS,2006,515(4):2722. |
APA | Xiang, WF,Liu, YZ,Lu, HB,Yan, L,He, M,&Chen, ZH.(2006).Interfacial control of LaAlO3 films deposited on Si (100) using a thin La-Al-Si-O silicate film as the barrier layer.THIN SOLID FILMS,515(4),2722. |
MLA | Xiang, WF,et al."Interfacial control of LaAlO3 films deposited on Si (100) using a thin La-Al-Si-O silicate film as the barrier layer".THIN SOLID FILMS 515.4(2006):2722. |
入库方式: OAI收割
来源:物理研究所
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