中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Interfacial control of LaAlO3 films deposited on Si (100) using a thin La-Al-Si-O silicate film as the barrier layer

文献类型:期刊论文

作者Xiang, WF ; Liu, YZ ; Lu, HB ; Yan, L ; He, M ; Chen, ZH
刊名THIN SOLID FILMS
出版日期2006
卷号515期号:4页码:2722
关键词OXIDATION GROWTH OXIDES
ISSN号0040-6090
通讯作者Chen, ZH: Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Inst Phys, Beijing 100080, Peoples R China.
中文摘要Amorphous LaAlO3 thin films have been deposited by laser molecular beam epitaxy system on Si substrate with an abrupt interface. The formation of the interface between LaAlO3 and silicon was investigated in detail using high-resolution transmission electron microscopy and Xray photoelectron spectroscopy. When several atomic-thick LaAlO3 film was deposited at low temperature and subsequently annealed at high vacuum, a stable Si-La-Al-O silicate thin layer was formed. Using this very thin film as a buffer layer, LaAlO3 films can be deposited with an atomically defined interface at the high temperature and oxygen pressure conditions. With good understanding of the formation mechanism for the interfacial structure, we can control the interface between high-k oxide and Si substrate via optimized deposition parameters and specific growth sequences. (c) 2006 Elsevier B.V. All rights reserved.
收录类别SCI
语种英语
公开日期2013-09-18
源URL[http://ir.iphy.ac.cn/handle/311004/40133]  
专题物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式
GB/T 7714
Xiang, WF,Liu, YZ,Lu, HB,et al. Interfacial control of LaAlO3 films deposited on Si (100) using a thin La-Al-Si-O silicate film as the barrier layer[J]. THIN SOLID FILMS,2006,515(4):2722.
APA Xiang, WF,Liu, YZ,Lu, HB,Yan, L,He, M,&Chen, ZH.(2006).Interfacial control of LaAlO3 films deposited on Si (100) using a thin La-Al-Si-O silicate film as the barrier layer.THIN SOLID FILMS,515(4),2722.
MLA Xiang, WF,et al."Interfacial control of LaAlO3 films deposited on Si (100) using a thin La-Al-Si-O silicate film as the barrier layer".THIN SOLID FILMS 515.4(2006):2722.

入库方式: OAI收割

来源:物理研究所

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