Intersubband absorption from In0.26Ga0.74As/GaAs quantum dot superlattice
文献类型：期刊论文
| 作者 | Pan, D ; Zeng, YP ; Li, JM ; Zhang, CH ; Kong, MY ; Wang, HM ; Wang, CY ; Wu, J |
| 刊名 | JOURNAL OF CRYSTAL GROWTH
 |
| 出版日期 | 1997 |
| 卷号 | 175页码:760 |
| 关键词 | WELL INFRARED PHOTODETECTORS PHONON-SCATTERING LUMINESCENCE GAAS(100) |
| ISSN号 | 0022-0248 |
| 通讯作者 | Pan, D: CHINESE ACAD SCI, INST SEMICOND, MAT CTR, POB 912, BEIJING 100083, PEOPLES R CHINA. |
| 中文摘要 | We have grown a high-quality 20 period InGaAs/GaAs quantum dot superlattice with a standard structure typically used for quantum well infrared photodetector. Normal incident absorption was observed around 13-15 mu m. Potential applications for this work include high-performance quantum dot infrared detectors. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-18 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/40191]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Pan, D,Zeng, YP,Li, JM,et al. Intersubband absorption from In0.26Ga0.74As/GaAs quantum dot superlattice[J]. JOURNAL OF CRYSTAL GROWTH,1997,175:760. |
| APA | Pan, D.,Zeng, YP.,Li, JM.,Zhang, CH.,Kong, MY.,...&Wu, J.(1997).Intersubband absorption from In0.26Ga0.74As/GaAs quantum dot superlattice.JOURNAL OF CRYSTAL GROWTH,175,760. |
| MLA | Pan, D,et al."Intersubband absorption from In0.26Ga0.74As/GaAs quantum dot superlattice".JOURNAL OF CRYSTAL GROWTH 175(1997):760. |
入库方式： OAI收割
来源：物理研究所
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