INTERVALLEY GAMMA-X DEFORMATION POTENTIALS FOR TOP VALENCE BANDS IN III-V ZINCBLENDE SEMICONDUCTORS BY ABINITIO PSEUDOPOTENTIAL CALCULATIONS
文献类型：期刊论文
| 作者 | WANG, JQ ; GU, BY |
| 刊名 | JOURNAL OF PHYSICS-CONDENSED MATTER
 |
| 出版日期 | 1993 |
| 卷号 | 5期号:6页码:647 |
| 关键词 | NORM-CONSERVING PSEUDOPOTENTIALS VELOCITY-FIELD CHARACTERISTICS LATTICE-DYNAMICAL PROPERTIES SCATTERING MATRIX-ELEMENTS DELTA-ELECTRON-PHONON BRILLOUIN-ZONE TEMPERATURE-DEPENDENCE CARRIER SCATTERING GALLIUM-PHOSPHIDE CRITICAL-POINTS |
| ISSN号 | 0953-8984 |
| 通讯作者 | WANG, JQ: CHINA CTR ADV SCI & TECHNOL,WORLD LAB,POB 8730,BEIJING 100080,PEOPLES R CHINA. |
| 中文摘要 | We have calculated GAMMA-X hole-phonon scattering matrix elements for the top valence bands in nine III-V zincblende semiconductors AIP, AlAs, AlSb, GaP, GaAs, GaSb, InP, InAs and InSb, by ab initio pseudopotential calculations. At the same time, we have calculated the eigenfrequencies and eigenvectors of transverse acoustic (TA) and optic (TO) phonons at X in these materials, which agree very well with the available experimental results. We have evaluated the GAMMA-X intervalley deformation potentials (IVDPs) for the longitudinal phonons and transverse phonons, respectively. The TVDPs for the TAX phonon are very small, as expected from symmetry. The IVDPs for the TOX phonon do not vary appreciably from one semiconductor to another, averaging about 5 ev angstrom-1. IVDPs for the longitudinal phonon with X1 symmetry are generally larger than those of X3 symmetry. This is due to more screening to the long-range electron-phonon interaction for the X3 phonon by electron redistribution, resulting in smaller IVDPs. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-18 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/40196]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | WANG, JQ,GU, BY. INTERVALLEY GAMMA-X DEFORMATION POTENTIALS FOR TOP VALENCE BANDS IN III-V ZINCBLENDE SEMICONDUCTORS BY ABINITIO PSEUDOPOTENTIAL CALCULATIONS[J]. JOURNAL OF PHYSICS-CONDENSED MATTER,1993,5(6):647. |
| APA | WANG, JQ,&GU, BY.(1993).INTERVALLEY GAMMA-X DEFORMATION POTENTIALS FOR TOP VALENCE BANDS IN III-V ZINCBLENDE SEMICONDUCTORS BY ABINITIO PSEUDOPOTENTIAL CALCULATIONS.JOURNAL OF PHYSICS-CONDENSED MATTER,5(6),647. |
| MLA | WANG, JQ,et al."INTERVALLEY GAMMA-X DEFORMATION POTENTIALS FOR TOP VALENCE BANDS IN III-V ZINCBLENDE SEMICONDUCTORS BY ABINITIO PSEUDOPOTENTIAL CALCULATIONS".JOURNAL OF PHYSICS-CONDENSED MATTER 5.6(1993):647. |
入库方式： OAI收割
来源：物理研究所
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