Intracavity-doubled self-Q-switched Nd,Cr : YAG 946/473 nm microchip laser
文献类型：期刊论文
| 作者 | Li, DH ; Wang, L ; Gao, CQ ; Zhang, ZG ; Feng, BH ; Gaebler, V ; Liu, BN ; Eichler, HJ ; Zhang, SW ; Liu, AH ; Shen, DZ |
| 刊名 | CHINESE PHYSICS LETTERS
 |
| 出版日期 | 2002 |
| 卷号 | 19期号:4页码:504 |
| 关键词 | CR ND-YAG OUTPUT ND-YAG LASER |
| ISSN号 | 0256-307X |
| 通讯作者 | Li, DH: Chinese Acad Sci, Inst Phys, Lab Opt Phys, Beijing 100080, Peoples R China. |
| 中文摘要 | We carried out the operation of an intracavity frequency-doubled self-Q-switched Nd, Cr: YAG/KNbO3 946/473 nm microchip laser pumped by a Ti:sapphire laser. The overall cavity length was about 4 mm. The maximum average blue power of 12 mW was achieved with a repetition rate of 13 kHz at an absorbed pump power of 545 m W. The pulses of the 4 73 nm laser had a duration of 7 ns and a peak power of 132 W at this pump level. The conversion efficiency was 2.2% with respect to the absorbed pump power of a 808 nm laser. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-18 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/40199]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Li, DH,Wang, L,Gao, CQ,et al. Intracavity-doubled self-Q-switched Nd,Cr : YAG 946/473 nm microchip laser[J]. CHINESE PHYSICS LETTERS,2002,19(4):504. |
| APA | Li, DH.,Wang, L.,Gao, CQ.,Zhang, ZG.,Feng, BH.,...&Shen, DZ.(2002).Intracavity-doubled self-Q-switched Nd,Cr : YAG 946/473 nm microchip laser.CHINESE PHYSICS LETTERS,19(4),504. |
| MLA | Li, DH,et al."Intracavity-doubled self-Q-switched Nd,Cr : YAG 946/473 nm microchip laser".CHINESE PHYSICS LETTERS 19.4(2002):504. |
入库方式： OAI收割
来源：物理研究所
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