Intrinsic current-voltage properties of nanowires with four-probe scanning tunneling microscopy: A conductance transition of ZnO nanowire
文献类型：期刊论文
| 作者 | Lin, X ; He, XB ; Yang, TZ ; Guo, W ; Shi, DX ; Gao, HJ ; Ma, DDD ; Lee, ST ; Liu, F ; Xie, XC |
| 刊名 | APPLIED PHYSICS LETTERS
 |
| 出版日期 | 2006 |
| 卷号 | 89期号:4 |
| 关键词 | CARBON NANOTUBES FLUORESCENCE MANIPULATION ELECTRONICS TRANSPORT OXIDE |
| ISSN号 | 0003-6951 |
| 通讯作者 | Gao, HJ: Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, POB 603, Beijing 100080, Peoples R China. |
| 中文摘要 | We report intrinsic current-voltage properties of ZnO nanowire measured by a four-tip scanning tunneling microscopy (F-STM). It is found that after bending the nanowire with the F-STM the conductance is reduced by about five orders of magnitude. The cathodoluminescent spectra indicate that the ZnO nanowires contain a sizable amount of defects in the surface region, responsible for their conduction. It is suggested that the observed huge conductance changes are caused by the shifting of the surface defect states in the ZnO nanowires in response to the applied surface strain. (c) 2006 American Institute of Physics. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-18 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/40206]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Lin, X,He, XB,Yang, TZ,et al. Intrinsic current-voltage properties of nanowires with four-probe scanning tunneling microscopy: A conductance transition of ZnO nanowire[J]. APPLIED PHYSICS LETTERS,2006,89(4). |
| APA | Lin, X.,He, XB.,Yang, TZ.,Guo, W.,Shi, DX.,...&Xie, XC.(2006).Intrinsic current-voltage properties of nanowires with four-probe scanning tunneling microscopy: A conductance transition of ZnO nanowire.APPLIED PHYSICS LETTERS,89(4). |
| MLA | Lin, X,et al."Intrinsic current-voltage properties of nanowires with four-probe scanning tunneling microscopy: A conductance transition of ZnO nanowire".APPLIED PHYSICS LETTERS 89.4(2006). |
入库方式： OAI收割
来源：物理研究所
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