Intrinsic Memory Function of Carbon Nanotube-based Ferroelectric Field-Effect Transistor
文献类型:期刊论文
作者 | Fu, WY ; Xu, Z ; Bai, XD ; Gu, CZ ; Wang, EG |
刊名 | NANO LETTERS
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出版日期 | 2009 |
卷号 | 9期号:3页码:921 |
关键词 | ACCESS MEMORY DEAD LAYER NONVOLATILE PERFORMANCE DEVICES CAPACITORS FILM |
ISSN号 | 1530-6984 |
通讯作者 | Bai, XD: Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China. |
中文摘要 | We demonstrate the intrinsic memory function of ferroelectric field-effect transistors (FeFETs) based on an integration of individual single-walled carbon nanotubes (SWCNTs) and epitaxial ferroelectric films. In contrast to the previously reported "charge-storage" CNT-FET memories, whose operations are haunted by a lack of control over the "charge traps", the present CNT-FeFETs exhibit a well-defined memory hysteresis loop Induced by the reversible remnant polarization of the ferroelectric films. Large memory windows similar to 4 V, data retention time up to 1 week, and ultralow, power consumption (energy per bit) of similar to femto-joule, are highlighted in this report. Further simulations and experimental results show that the memory device Is valid under operation voltage less than 1 V due to an electric-field enhancement effect induced by the ultrathin SWCNTs. |
收录类别 | SCI |
资助信息 | NSF [50725209, 60621091]; MOST [2006AA03Z402, 2007CB936203]; CAS of China |
语种 | 英语 |
公开日期 | 2013-09-18 |
源URL | [http://ir.iphy.ac.cn/handle/311004/40212] ![]() |
专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
推荐引用方式 GB/T 7714 | Fu, WY,Xu, Z,Bai, XD,et al. Intrinsic Memory Function of Carbon Nanotube-based Ferroelectric Field-Effect Transistor[J]. NANO LETTERS,2009,9(3):921. |
APA | Fu, WY,Xu, Z,Bai, XD,Gu, CZ,&Wang, EG.(2009).Intrinsic Memory Function of Carbon Nanotube-based Ferroelectric Field-Effect Transistor.NANO LETTERS,9(3),921. |
MLA | Fu, WY,et al."Intrinsic Memory Function of Carbon Nanotube-based Ferroelectric Field-Effect Transistor".NANO LETTERS 9.3(2009):921. |
入库方式: OAI收割
来源:物理研究所
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