Intrinsic spin Hall effect in monolayers of group-VI dichalcogenides: A first-principles study
文献类型：期刊论文
| 作者 | Feng, WX ; Yao, YG ; Zhu, WG ; Zhou, JJ ; Yao, W ; Xiao, D |
| 刊名 | PHYSICAL REVIEW B
 |
| 出版日期 | 2012 |
| 卷号 | 86期号:16 |
| 关键词 | ELECTRONIC-PROPERTIES VALLEY POLARIZATION WANNIER FUNCTIONS MOS2 |
| ISSN号 | 1098-0121 |
| 通讯作者 | Feng, WX: Beijing Inst Technol, Sch Phys, Beijing 100081, Peoples R China. |
| 中文摘要 | Polarization-modulated resistive switching and fatigue behaviors of the Ag/La0.1Bi0.9FeO3/La0.7Sr0.3MnO3 capacitors have been investigated. The device resistance is found to show a V-shaped dependence on poling voltage, and the lowest resistance appears at the voltage corresponding to the coercive field of La0.1Bi0.9FeO3. Based on this relation, three distinct resistance states can be achieved by applying appropriate pulse trains, which manifests a potential application in high-density storage technology. The fatigue properties of the sample under repeated bipolar or unipolar pulses were further analyzed. Bipolar pulses enhance the rectifying characters of the current-voltage relation, whereas unipolar pulses produce a reverse effect. Based on impedance analysis, we propose the formation of leakage paths along conductive domain walls, and it is the domain reconstruction during repeated polarization flipping that results in the complex transport behavior observed. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4757987] |
| 收录类别 | SCI |
| 资助信息 | Laboratory Directed Research and Development Program of ORNL; Research Grant Council of Hong Kong [HKU706412P]; MOST Project of China [2011CBA00100]; NSF of China [10974231, 11174337]; US Department of Energy, Office of Basic Energy Sciences, Materials Sciences and Engineering Division |
| 语种 | 英语 |
| 公开日期 | 2013-09-18 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/40219]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Feng, WX,Yao, YG,Zhu, WG,et al. Intrinsic spin Hall effect in monolayers of group-VI dichalcogenides: A first-principles study[J]. PHYSICAL REVIEW B,2012,86(16). |
| APA | Feng, WX,Yao, YG,Zhu, WG,Zhou, JJ,Yao, W,&Xiao, D.(2012).Intrinsic spin Hall effect in monolayers of group-VI dichalcogenides: A first-principles study.PHYSICAL REVIEW B,86(16). |
| MLA | Feng, WX,et al."Intrinsic spin Hall effect in monolayers of group-VI dichalcogenides: A first-principles study".PHYSICAL REVIEW B 86.16(2012). |
入库方式： OAI收割
来源：物理研究所
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