Investigation of defects in low-temperature-grown GaAs using optical transient spectroscopy
文献类型：期刊论文
| 作者 | Zhang, YH ; Lu, LW ; Zhang, MH ; Huang, Q ; Bao, CL ; Zhou, JM |
| 刊名 | JOURNAL OF CRYSTAL GROWTH
 |
| 出版日期 | 2000 |
| 卷号 | 220期号:4页码:351 |
| 关键词 | BEAM-EPITAXIAL GAAS |
| ISSN号 | 0022-0248 |
| 通讯作者 | Lu, LW: Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, Beijing 100083, Peoples R China. |
| 中文摘要 | Optical transient current spectroscopy (OTCS) has been used to investigate defects in the low-temperature-grown GaAs after postgrowth rapid thermal annealing (RTA). Two samples A and B were grown at 220 degreesC and 360 degreesC on (001) GaAs substrates, respectively. After growth, samples were subjected to 30s RTA in the range of 500-800 degreesC. Before annealing, X-ray diffraction measurements show that the concentrations of the excess arsenic for samples A and B are 2.5 x 10(19) and 1 x 10(19) cm(-3), respectively. It is found that there are strong negative decay signals in the optical transient current (OTC) for the annealed sample A. Due to the influence of OTC strong negative decay signals, it is impossible to identify deep levels clearly from OTCS. For a comparison, three deep levels can be identified for sample B before annealing. They are two shallower deep levels and the so-called As-Ga antisite defect. At the annealing temperature of 600 degreesC, there are still three deep levels. However, their structures are different from those in the as-grown sample. OTC strong negative decay signals are also observed for the annealed sample B. It is argued that OTC negative decay signals are related to arsenic clusters. (C) 2000 Elsevier Science B.V. All rights reserved. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-18 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/40244]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Zhang, YH,Lu, LW,Zhang, MH,et al. Investigation of defects in low-temperature-grown GaAs using optical transient spectroscopy[J]. JOURNAL OF CRYSTAL GROWTH,2000,220(4):351. |
| APA | Zhang, YH,Lu, LW,Zhang, MH,Huang, Q,Bao, CL,&Zhou, JM.(2000).Investigation of defects in low-temperature-grown GaAs using optical transient spectroscopy.JOURNAL OF CRYSTAL GROWTH,220(4),351. |
| MLA | Zhang, YH,et al."Investigation of defects in low-temperature-grown GaAs using optical transient spectroscopy".JOURNAL OF CRYSTAL GROWTH 220.4(2000):351. |
入库方式： OAI收割
来源：物理研究所
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