Investigation of dislocations and traps in MBE grown p-InGaAs/GaAs heterostructures
文献类型：期刊论文
| 作者 | Du, AY ; Li, MF ; Chong, TC ; Xu, SJ ; Zhang, Z ; Yu, DP |
| 刊名 | THIN SOLID FILMS
 |
| 出版日期 | 1997 |
| 卷号 | 311期号:1-2页码:7 |
| 关键词 | HETEROJUNCTION BIPOLAR-TRANSISTORS MISFIT DISLOCATIONS THICKNESS ELECTRON LAYERS STATES |
| ISSN号 | 0040-6090 |
| 通讯作者 | Li, MF: Natl Univ Singapore, Dept Elect Engn, Ctr Optoelect, Singapore 119260, Singapore. |
| 中文摘要 | Dislocations and traps in MBE grown p-InGaAs/GaAs lattice-mismatched heterostructures are investigated by Cross-section Transmission Electron Microscopy (XTEM), Deep Level Transient Spectroscopy (DLTS) and Photo-luminescence (PL). The misfit dislocations and the threading dislocations observed by XTEM in different samples with different In mole fractions and different InGaAs layer thickness generally satisfy the Dodson-Tsao's plastic flow critical layer thickness curve. The XTEM, DLTS and PL results are consistent with each other. The threading dislocations in bulk layers introduce three hole trap levels H1, H2 and H5 with DLTS activation energies of 0.32 eV, 0.40 eV, 0.88 eV, respectively, and one electron trap E1 with DLTS activation energy of 0.54 eV. The misfit dislocations in relaxed InGaAs/GaAs interface induce a hole trap level H4 with DLTS activation energy between the range of 0.67-0.73 eV. All dislocation induced traps are non-radiative recombination centers which greatly degrade the optical property of the InGaAs/GaAs layers. (C) 1997 Elsevier Science S.A. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-18 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/40250]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Du, AY,Li, MF,Chong, TC,et al. Investigation of dislocations and traps in MBE grown p-InGaAs/GaAs heterostructures[J]. THIN SOLID FILMS,1997,311(1-2):7. |
| APA | Du, AY,Li, MF,Chong, TC,Xu, SJ,Zhang, Z,&Yu, DP.(1997).Investigation of dislocations and traps in MBE grown p-InGaAs/GaAs heterostructures.THIN SOLID FILMS,311(1-2),7. |
| MLA | Du, AY,et al."Investigation of dislocations and traps in MBE grown p-InGaAs/GaAs heterostructures".THIN SOLID FILMS 311.1-2(1997):7. |
入库方式： OAI收割
来源：物理研究所
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