中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
INVESTIGATION OF GAAS/SI MATERIAL BY X-RAY DOUBLE-CRYSTAL DIFFRACTION

文献类型:期刊论文

作者LI, CR ; MAI, ZH ; CUI, SF ; ZHOU, JM ; WANG, YT
刊名JOURNAL OF APPLIED PHYSICS
出版日期1991
卷号70期号:8页码:4172
关键词CHEMICAL VAPOR-DEPOSITION SOLAR-CELL APPLICATIONS MOLECULAR-BEAM EPITAXY SI HETEROSTRUCTURES SUPERLATTICES
ISSN号0021-8979
通讯作者LI, CR: CHINESE ACAD SCI,INST PHYS,BEIJING 100080,PEOPLES R CHINA.
中文摘要GaAs epilayer films on Si substrates grown by molecular-beam epitaxy were investigated by the x-ray double-crystal diffraction method. The rocking curves were recorded for different diffraction vectors of samples. The results show that the unit-cell volumes of GaAs epilayers are smaller than that of the GaAs bulk material. The strained-layer superlattice buffer layer can improve the quality of the film, especially in the surface lamella. The parameter W' = W(expt)/(square-root \gamma-h\/gamma-0/sin 2-theta-B) is introduced to describe the quality of different depths of epilayers. As the x-ray incident angle is increased, W' also increases, that is, the quality of the film deteriorates with increasing penetration distance of the x-ray beam. Therefore, W' can be considered as a parameter that describes the degree of perfection of the epilayer along the depth below the surface. The cross-section transmission electron microscopy observations agree with the results of x-ray double-crystal diffraction.
收录类别SCI
语种英语
公开日期2013-09-18
源URL[http://ir.iphy.ac.cn/handle/311004/40254]  
专题物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式
GB/T 7714
LI, CR,MAI, ZH,CUI, SF,et al. INVESTIGATION OF GAAS/SI MATERIAL BY X-RAY DOUBLE-CRYSTAL DIFFRACTION[J]. JOURNAL OF APPLIED PHYSICS,1991,70(8):4172.
APA LI, CR,MAI, ZH,CUI, SF,ZHOU, JM,&WANG, YT.(1991).INVESTIGATION OF GAAS/SI MATERIAL BY X-RAY DOUBLE-CRYSTAL DIFFRACTION.JOURNAL OF APPLIED PHYSICS,70(8),4172.
MLA LI, CR,et al."INVESTIGATION OF GAAS/SI MATERIAL BY X-RAY DOUBLE-CRYSTAL DIFFRACTION".JOURNAL OF APPLIED PHYSICS 70.8(1991):4172.

入库方式: OAI收割

来源:物理研究所

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