INVESTIGATION OF GAAS/SI MATERIAL BY X-RAY DOUBLE-CRYSTAL DIFFRACTION
文献类型：期刊论文
| 作者 | LI, CR ; MAI, ZH ; CUI, SF ; ZHOU, JM ; WANG, YT |
| 刊名 | JOURNAL OF APPLIED PHYSICS
 |
| 出版日期 | 1991 |
| 卷号 | 70期号:8页码:4172 |
| 关键词 | CHEMICAL VAPOR-DEPOSITION SOLAR-CELL APPLICATIONS MOLECULAR-BEAM EPITAXY SI HETEROSTRUCTURES SUPERLATTICES |
| ISSN号 | 0021-8979 |
| 通讯作者 | LI, CR: CHINESE ACAD SCI,INST PHYS,BEIJING 100080,PEOPLES R CHINA. |
| 中文摘要 | GaAs epilayer films on Si substrates grown by molecular-beam epitaxy were investigated by the x-ray double-crystal diffraction method. The rocking curves were recorded for different diffraction vectors of samples. The results show that the unit-cell volumes of GaAs epilayers are smaller than that of the GaAs bulk material. The strained-layer superlattice buffer layer can improve the quality of the film, especially in the surface lamella. The parameter W' = W(expt)/(square-root \gamma-h\/gamma-0/sin 2-theta-B) is introduced to describe the quality of different depths of epilayers. As the x-ray incident angle is increased, W' also increases, that is, the quality of the film deteriorates with increasing penetration distance of the x-ray beam. Therefore, W' can be considered as a parameter that describes the degree of perfection of the epilayer along the depth below the surface. The cross-section transmission electron microscopy observations agree with the results of x-ray double-crystal diffraction. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-18 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/40254]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | LI, CR,MAI, ZH,CUI, SF,et al. INVESTIGATION OF GAAS/SI MATERIAL BY X-RAY DOUBLE-CRYSTAL DIFFRACTION[J]. JOURNAL OF APPLIED PHYSICS,1991,70(8):4172. |
| APA | LI, CR,MAI, ZH,CUI, SF,ZHOU, JM,&WANG, YT.(1991).INVESTIGATION OF GAAS/SI MATERIAL BY X-RAY DOUBLE-CRYSTAL DIFFRACTION.JOURNAL OF APPLIED PHYSICS,70(8),4172. |
| MLA | LI, CR,et al."INVESTIGATION OF GAAS/SI MATERIAL BY X-RAY DOUBLE-CRYSTAL DIFFRACTION".JOURNAL OF APPLIED PHYSICS 70.8(1991):4172. |
入库方式： OAI收割
来源：物理研究所
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