Investigation on interface related charge trap and loss characteristics of high-k based trapping structures by electrostatic force microscopy
文献类型：期刊论文
| 作者 | Zhu, CX ; Xu, ZG ; Huo, ZL ; Yang, R ; Zheng, ZW ; Cui, YX ; Liu, J ; Wang, YM ; Shi, DX ; Zhang, GY ; Li, FH ; Liu, M |
| 刊名 | APPLIED PHYSICS LETTERS
 |
| 出版日期 | 2011 |
| 卷号 | 99期号:22 |
| 关键词 | FLASH MEMORY LAYER |
| ISSN号 | 0003-6951 |
| 通讯作者 | Liu, M: Chinese Acad Sci, Inst Microelect, Lab Nanofabricat & Novel Devices Integrated Techn, Beijing 100029, Peoples R China. |
| 中文摘要 | Charge trap and loss characteristics of high-k based trapping layer structures are investigated by electrostatic force microscopy, which proves that the interfaces provide dominate trap sites. The effects of post-deposition anneal of HfO(2) and Al(2)O(3) single layer are determined. Based on aforementioned findings, we demonstrate the HfO(2)/Al(2)O(3) bi-layers trapping structure with improved performance. The lateral charge spreading properties are also evaluated by extracted diffusion coefficients to further understand the interface effect. The study may provide insights into fundamental assessment and optimization for charge trapping structures, especially for high-density NAND flash applications. (C) 2011 American Institute of Physics. [doi:10.1063/1.3664222] |
| 收录类别 | SCI |
| 资助信息 | MOST [2010CB934200, 2011CBA00600]; National Natural Science Foundation of China [60825403, 61176073]; National Science and Technology Major Project of China [2009ZX02023-005] |
| 语种 | 英语 |
| 公开日期 | 2013-09-18 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/40326]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Zhu, CX,Xu, ZG,Huo, ZL,et al. Investigation on interface related charge trap and loss characteristics of high-k based trapping structures by electrostatic force microscopy[J]. APPLIED PHYSICS LETTERS,2011,99(22). |
| APA | Zhu, CX.,Xu, ZG.,Huo, ZL.,Yang, R.,Zheng, ZW.,...&Liu, M.(2011).Investigation on interface related charge trap and loss characteristics of high-k based trapping structures by electrostatic force microscopy.APPLIED PHYSICS LETTERS,99(22). |
| MLA | Zhu, CX,et al."Investigation on interface related charge trap and loss characteristics of high-k based trapping structures by electrostatic force microscopy".APPLIED PHYSICS LETTERS 99.22(2011). |
入库方式： OAI收割
来源：物理研究所
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