Investigations of three-terminal electronic measurement on quantum dot devices
文献类型：期刊论文
| 作者 | Zhu, Y ; Wang, TH |
| 刊名 | ACTA PHYSICA SINICA
 |
| 出版日期 | 2003 |
| 卷号 | 52期号:3页码:677 |
| 关键词 | CURRENT TRANSPORT SCHOTTKY DIODE TRANSISTORS HYSTERESIS BARRIER |
| ISSN号 | 1000-3290 |
| 通讯作者 | Zhu, Y: Chinese Acad Sci, Inst Phys, POB 603, Beijing 100080, Peoples R China. |
| 中文摘要 | Theree-terminal electronic measurements have been performed on quantum devices with a modulation-doped two-dimensional (2D) electron gas structure.The resistance with the 2D electron gas and that with the tunnel resistance through the dots can be obtained by analyzing the experimental data. Our results show that the lateral coupling between the quantum dots mainly determine the transport properties of the quantum dot devices under small biases. |
| 收录类别 | SCI |
| 语种 | 中文 |
| 公开日期 | 2013-09-18 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/40354]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Zhu, Y,Wang, TH. Investigations of three-terminal electronic measurement on quantum dot devices[J]. ACTA PHYSICA SINICA,2003,52(3):677. |
| APA | Zhu, Y,&Wang, TH.(2003).Investigations of three-terminal electronic measurement on quantum dot devices.ACTA PHYSICA SINICA,52(3),677. |
| MLA | Zhu, Y,et al."Investigations of three-terminal electronic measurement on quantum dot devices".ACTA PHYSICA SINICA 52.3(2003):677. |
入库方式： OAI收割
来源：物理研究所
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