Ion beam syntheses and microstructure studies of a new FeSi2 phase
文献类型：期刊论文
| 作者 | Jin, S ; Li, XN ; Zhang, Z ; Dong, C ; Gong, ZX ; Bender, H ; Ma, TC |
| 刊名 | JOURNAL OF APPLIED PHYSICS
 |
| 出版日期 | 1996 |
| 卷号 | 80期号:6页码:3306 |
| 关键词 | SEMICONDUCTING FESI2 EPITAXIAL-FILMS SILICIDES SILICON BETA-FESI2 |
| ISSN号 | 0021-8979 |
| 中文摘要 | Iron-silicide has been formed by ion implantation of iron into silicon (111). In the as-implanted sample, a new type of orthorhombic FeSi2 phase was found. Although the lattice parameters of the new phase are the same as those of the known semiconductor beta-FeSi2, its point group and space group were different and determined to be mmm and Pbca, respectively. (C) 1996 American Institute of Physics. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-18 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/40366]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Jin, S,Li, XN,Zhang, Z,et al. Ion beam syntheses and microstructure studies of a new FeSi2 phase[J]. JOURNAL OF APPLIED PHYSICS,1996,80(6):3306. |
| APA | Jin, S.,Li, XN.,Zhang, Z.,Dong, C.,Gong, ZX.,...&Ma, TC.(1996).Ion beam syntheses and microstructure studies of a new FeSi2 phase.JOURNAL OF APPLIED PHYSICS,80(6),3306. |
| MLA | Jin, S,et al."Ion beam syntheses and microstructure studies of a new FeSi2 phase".JOURNAL OF APPLIED PHYSICS 80.6(1996):3306. |
入库方式： OAI收割
来源：物理研究所
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