Ion beam synthesis of Ni-Fe-Si layer by TEM
文献类型：期刊论文
| 作者 | Li, XN ; Dong, C ; Jin, S ; Ma, TC ; Zhang, QY |
| 刊名 | SURFACE & COATINGS TECHNOLOGY
 |
| 出版日期 | 1998 |
| 卷号 | 104页码:231 |
| 关键词 | IRON DISILICIDE SILICON FILMS |
| ISSN号 | 0257-8972 |
| 通讯作者 | Zhang, QY: Dalian Univ Technol, State Key Lab Mat Modificat Laser Ion & Electron, Dalian 116024, Peoples R China. |
| 中文摘要 | Nickel and iron ions were selected to be implanted sequentially into (100) orientation silicon wafers to synthesize Ni-Fe-Si ternary silicide film. By using the metal-vapour vacuum-are ion-implantation system MEVVA 80-10, a ternary silicide layer of gamma-Fe0.6Ni0.4Si2 with CaF2 structure has been formed at implantation conditions of 7 x 10(16) Ni ions cm(-2) and 1.4 x 10(17) Fe ions cm(-2). With increase in annealing temperature, the grain size in the layer grows and the gamma phase is decomposed into nickel-rich and iron-rich phases. In the temperature range from 500 to 600 degrees C, a valuable structure of beta-Feo(0.6)Ni(0.4)Si(2)/CaF2-Fe0.35Ni0.65Si2/Si can be obtained. At proper annealing conditions, the gamma phase is decomposed into NiSi2 and FeSi2 phases. The morphology evolution of Ni-Fe-Si ternary silicide with increasing annealing temperature ranges from the layer thickness increasing to the film shrinking into isolated islands at 850 degrees C. (C) 1998 Elsevier Science S.A. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-18 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/40367]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Li, XN,Dong, C,Jin, S,et al. Ion beam synthesis of Ni-Fe-Si layer by TEM[J]. SURFACE & COATINGS TECHNOLOGY,1998,104:231. |
| APA | Li, XN,Dong, C,Jin, S,Ma, TC,&Zhang, QY.(1998).Ion beam synthesis of Ni-Fe-Si layer by TEM.SURFACE & COATINGS TECHNOLOGY,104,231. |
| MLA | Li, XN,et al."Ion beam synthesis of Ni-Fe-Si layer by TEM".SURFACE & COATINGS TECHNOLOGY 104(1998):231. |
入库方式： OAI收割
来源：物理研究所
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