Ionized-oxygen vacancies related dielectric relaxation in heteroepitaxial K0.5Na0.5NbO3/La0.67Sr0.33MnO3 structure at elevated temperature
文献类型：期刊论文
| 作者 | Miao, J ; Xu, XG ; Jiang, Y ; Cao, LX ; Zhao, BR |
| 刊名 | APPLIED PHYSICS LETTERS
 |
| 出版日期 | 2009 |
| 卷号 | 95期号:13 |
| 关键词 | THIN-FILMS BEHAVIOR SRTIO3 |
| ISSN号 | 0003-6951 |
| 通讯作者 | Miao, J: Univ Sci & Technol Beijing, Sch Mat Sci & Engn, State Key Lab Adv Met & Mat, Beijing 100083, Peoples R China. |
| 中文摘要 | Ferroelectric K0.5Na0.5NbO3 (KNN) thin film was epitaxially grown on La0.67Sr0.33MnO3 (LSMO) buffered LaAlO3 substrate by pulse laser deposition. The crystallographic structure of KNN/LSMO was confirmed by x-ray diffraction. Interestingly, a dielectric relaxor feature was found in the temperature range 200-350 degrees C. The activation energies for relaxation and conduction of the films were found to be 1.87 and 0.63-0.71 eV, respectively. The mechanism for dielectric relaxation in KNN/LSMO structure was discussed under a thermally activated process. The remnant polarization and coercive field of the films were 21.3 mu C/cm(2) and 91 kV/cm, respectively. (C) 2009 American Institute of Physics. [doi:10.1063/1.3242009] |
| 收录类别 | SCI |
| 资助信息 | National Natural Science Foundation of China [50802007, 50831002]; Research Fund for the Doctoral Program of Higher Education of China [200800081011]; National Basic Research Program of China [2007CB936202] |
| 语种 | 英语 |
| 公开日期 | 2013-09-18 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/40389]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Miao, J,Xu, XG,Jiang, Y,et al. Ionized-oxygen vacancies related dielectric relaxation in heteroepitaxial K0.5Na0.5NbO3/La0.67Sr0.33MnO3 structure at elevated temperature[J]. APPLIED PHYSICS LETTERS,2009,95(13). |
| APA | Miao, J,Xu, XG,Jiang, Y,Cao, LX,&Zhao, BR.(2009).Ionized-oxygen vacancies related dielectric relaxation in heteroepitaxial K0.5Na0.5NbO3/La0.67Sr0.33MnO3 structure at elevated temperature.APPLIED PHYSICS LETTERS,95(13). |
| MLA | Miao, J,et al."Ionized-oxygen vacancies related dielectric relaxation in heteroepitaxial K0.5Na0.5NbO3/La0.67Sr0.33MnO3 structure at elevated temperature".APPLIED PHYSICS LETTERS 95.13(2009). |
入库方式： OAI收割
来源：物理研究所
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