I-V Characteristics of Metal-Oxide-ZnSe Nanowire Structure
文献类型：期刊论文
| 作者 | Zhou, SX ; Wang, YG ; Han, W ; Wang, N |
| 刊名 | JOURNAL OF PHYSICAL CHEMISTRY C
 |
| 出版日期 | 2008 |
| 卷号 | 112期号:47页码:18644 |
| 关键词 | SCHOTTKY DIODES CONTACTS LASERS FILMS |
| ISSN号 | 1932-7447 |
| 通讯作者 | Wang, YG: Hunan Univ, Minist Educ, Key Lab Micronano Optoelect Devices, Changsha 410082, Hunan, Peoples R China. |
| 中文摘要 | The electron transport of metal-insulator-semiconductor nanowire (MIS) structure consisting of the Al electrode covered by a thin alumina oxide layer and a single ZnSe nanowire was studied experimentally. The I-V measurement of an individual ZnSe nanowire contacted to Au and the alumina oxide covered Al electrodes, which resulted in metal-semiconductor (MS) and MIS structures at Au/ZnSe and Al/AlOx/ZnSe interfaces, respectively, has been carried out by in situ transmission electron microscopy (TEM). These measured I-V curves have the typical nonlinear feature coincident with the Schottky contact barriers at the interfaces between the semiconductor and metal electrodes. There is no current recorded between 3.8 V, and the threshold voltage range was therefore examined. This high threshold voltage obviously resulted from the thin alumina oxide layer at the surface of the Al electrode, which acts as an insulator and, consequently, results in high contact barrier. The asymmetrical characteristics resulting from slow increase in current under the reverse bias can be explained by part of the electrons in Al electrode tunneling the alumina oxide at the energy levels corresponding to the position of the bandgap of the ZnSe semiconductor. |
| 收录类别 | SCI |
| 资助信息 | National natural Science foundation of China [60571044, 10774174]; "973" National Key Basic Research program of China [2007CB310500] |
| 语种 | 英语 |
| 公开日期 | 2013-09-18 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/40418]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Zhou, SX,Wang, YG,Han, W,et al. I-V Characteristics of Metal-Oxide-ZnSe Nanowire Structure[J]. JOURNAL OF PHYSICAL CHEMISTRY C,2008,112(47):18644. |
| APA | Zhou, SX,Wang, YG,Han, W,&Wang, N.(2008).I-V Characteristics of Metal-Oxide-ZnSe Nanowire Structure.JOURNAL OF PHYSICAL CHEMISTRY C,112(47),18644. |
| MLA | Zhou, SX,et al."I-V Characteristics of Metal-Oxide-ZnSe Nanowire Structure".JOURNAL OF PHYSICAL CHEMISTRY C 112.47(2008):18644. |
入库方式： OAI收割
来源：物理研究所
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