Kinetics of dissociative water adsorption on stepped Si(001), on Si(115), Si(113), Si(5,5,12) and Si(112)
文献类型：期刊论文
| 作者 | Ranke, W ; Xing, YR |
| 刊名 | SURFACE SCIENCE
 |
| 出版日期 | 1997 |
| 卷号 | 381期号:1页码:1 |
| 关键词 | SCANNING-TUNNELING-MICROSCOPY CYLINDRICAL SILICON CRYSTAL MILLER INDEX SURFACES ROOM-TEMPERATURE VICINAL SURFACES ATOMIC-STRUCTURE H2O SI(100) CHEMISORPTION LEED |
| ISSN号 | 0039-6028 |
| 通讯作者 | Ranke, W: MAX PLANCK GESELL,FRITZ HABER INST,FARADAYWEG 4-6,D-14195 BERLIN,GERMANY. |
| 中文摘要 | We present photoelectron spectroscopic and low energy electron diffraction measurements of water adsorption on flat Si samples of the orientations (001), (115), (113), (5,5,12) and (112) as well as on curved samples covering continuously the ranges (001)-(117) and (113)-(5,5,12)-(112). On all orientations, water adsorption is dissociative (OH and H) and non-destructive. On Si(001) the sticking coefficient S and the saturation coverage Theta(sat) are largest. On Si(001) and for small miscuts in the [110]-azimuth, S is constant nearly up to saturation which proves that the kinetics involves a weakly bound mobile precursor state. For (001)-vicinals with high miscut angles (9-13 degrees), the step structure breaks down, the precursor mobility is affected and the adsorption kinetics changed. On (115), (113), (5,5,12) and (112), the values of S and Theta(sat) are smaller which indicates that not all sites are able to dissociate and bind water. For (113) the shape of the adsorption curves Theta versus exposure shows the existence of two adsorption processes, one with mobile precursor kinetics and one with Langmuir-like kinetics. On (5,5,12), two processes with mobile precursor kinetics are observed which are ascribed to adsorption on different surface regions within the large surface unit cell. From the corresponding values of S and Theta(sat), data for structure models are deduced. (C) 1997 Elsevier Science B.V. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-18 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/40467]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Ranke, W,Xing, YR. Kinetics of dissociative water adsorption on stepped Si(001), on Si(115), Si(113), Si(5,5,12) and Si(112)[J]. SURFACE SCIENCE,1997,381(1):1. |
| APA | Ranke, W,&Xing, YR.(1997).Kinetics of dissociative water adsorption on stepped Si(001), on Si(115), Si(113), Si(5,5,12) and Si(112).SURFACE SCIENCE,381(1),1. |
| MLA | Ranke, W,et al."Kinetics of dissociative water adsorption on stepped Si(001), on Si(115), Si(113), Si(5,5,12) and Si(112)".SURFACE SCIENCE 381.1(1997):1. |
入库方式： OAI收割
来源：物理研究所
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