Kinetics of thermal annealing in strained ultrathin Si/Ge superlattices on vicinal Si(100) studied by Raman scattering
文献类型：期刊论文
| 作者 | Chen, ZH ; Xiao, XD ; Au, S ; Zhou, JM ; Loy, MMT |
| 刊名 | JOURNAL OF APPLIED PHYSICS
 |
| 出版日期 | 1996 |
| 卷号 | 80期号:4页码:2211 |
| 关键词 | LAYER SUPERLATTICES ELECTRONIC-PROPERTIES ION-IMPLANTATION GE INTERDIFFUSION |
| ISSN号 | 0021-8979 |
| 通讯作者 | Chen, ZH: CHINESE ACAD SCI,INST PHYS,POB 603,BEIJING 100080,PEOPLES R CHINA. |
| 中文摘要 | We report the experimental studies of in situ kinetic thermal annealing process by Raman scattering obtained from very short period Si/Ge superlattices grown on two types of vicinal Si(100) substrates. The experimental results show that the samples grown on double-stepped vicinal Si(100) substrates have well-defined in-plane strain in the epilayers and rather perfect interfaces. The samples grown on single-stepped vicinal Si(100), on the other hand, appear to have strain-relaxed and imperfect interfaces. The former is also thermodynamically mon stable than the latter, and a suggested explanation is given. (C) 1996 American Institute of Physics. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-18 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/40472]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Chen, ZH,Xiao, XD,Au, S,et al. Kinetics of thermal annealing in strained ultrathin Si/Ge superlattices on vicinal Si(100) studied by Raman scattering[J]. JOURNAL OF APPLIED PHYSICS,1996,80(4):2211. |
| APA | Chen, ZH,Xiao, XD,Au, S,Zhou, JM,&Loy, MMT.(1996).Kinetics of thermal annealing in strained ultrathin Si/Ge superlattices on vicinal Si(100) studied by Raman scattering.JOURNAL OF APPLIED PHYSICS,80(4),2211. |
| MLA | Chen, ZH,et al."Kinetics of thermal annealing in strained ultrathin Si/Ge superlattices on vicinal Si(100) studied by Raman scattering".JOURNAL OF APPLIED PHYSICS 80.4(1996):2211. |
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来源：物理研究所
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