Large area dimer vacancy array on the Si(100) surface studied by scanning tunneling microscope
文献类型：期刊论文
| 作者 | Yang, HQ ; Zhu, CX ; Gao, JN ; Xue, ZQ ; Pang, SJ |
| 刊名 | SURFACE SCIENCE
 |
| 出版日期 | 1998 |
| 卷号 | 412-13页码:236 |
| 关键词 | SI(001) SURFACES DEFECTS ADSORPTION SILICON EPITAXY GROWTH |
| ISSN号 | 0039-6028 |
| 通讯作者 | Yang, HQ: Chinese Acad Sci, Inst Phys, Beijing Lab Vacuum Phys, POB 2724, Beijing 100080, Peoples R China. |
| 中文摘要 | Large area dimer vacancy arrays can be formed on the Si(100) surface when Si atoms are deposited on the Si(100)-2 x 1 surface followed by quenching from 1200 degrees C. The dimer vacancy lines (DVLs) of the dimer vacancy array run perpendicular to the dimer rows and the basic building cells of the DVLs are: (i) a cluster of two missing dimers; (ii) a complex of one missing dimer and a cluster of two missing dimers. Small isolated islands with DVLs like that of the Si(100) surface are observed on the surface. The precursors of the islands are investigated. The formation mechanism of the island is that the interaction between the stress held of the dimers on the Si(100) surface and that of the island causes the dimer vacancies in the dimer rows of the island and the attraction between the dimer vacancies in adjacent dimer rows aligns the dimer vacancies. (C) 1998 Elsevier Science B.V. All rights reserved. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-18 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/40579]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Yang, HQ,Zhu, CX,Gao, JN,et al. Large area dimer vacancy array on the Si(100) surface studied by scanning tunneling microscope[J]. SURFACE SCIENCE,1998,412-13:236. |
| APA | Yang, HQ,Zhu, CX,Gao, JN,Xue, ZQ,&Pang, SJ.(1998).Large area dimer vacancy array on the Si(100) surface studied by scanning tunneling microscope.SURFACE SCIENCE,412-13,236. |
| MLA | Yang, HQ,et al."Large area dimer vacancy array on the Si(100) surface studied by scanning tunneling microscope".SURFACE SCIENCE 412-13(1998):236. |
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来源：物理研究所
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