Lateral epitaxial overgrowth of GaN films on patterned sapphire substrates fabricated by wet chemical etching
文献类型：期刊论文
| 作者 | Wang, J ; Guo, LW ; Jia, HQ ; Xing, ZG ; Wang, Y ; Chen, H ; Zhou, JM |
| 刊名 | THIN SOLID FILMS
 |
| 出版日期 | 2006 |
| 卷号 | 515期号:4页码:1727 |
| 关键词 | DENSITY GAN VAPOR-DEPOSITION GROWTH LAYERS |
| ISSN号 | 0040-6090 |
| 通讯作者 | Wang, J: Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, POB 603, Beijing 100080, Peoples R China. |
| 中文摘要 | A promising technique of lateral epitaxial overgrowth, namely CantiBridge epitaxy, is developed and demonstrated in order to reduce the threading dislocation density in GaN films. Using metalorganic chemical vapor deposition, the GaN films are grown on patterned sapphire fabricated by wet chemical etching, instead of traditional dry etching. The image of atomic force microscopy shows that the threading dislocations in CantiBridge-epitaxy GaN are reduced sharply, which makes a promising to realize the high-performance GaN-based optoelectronic devices. (c) 2006 Elsevier B.V. All rights reserved. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-18 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/40718]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Wang, J,Guo, LW,Jia, HQ,et al. Lateral epitaxial overgrowth of GaN films on patterned sapphire substrates fabricated by wet chemical etching[J]. THIN SOLID FILMS,2006,515(4):1727. |
| APA | Wang, J.,Guo, LW.,Jia, HQ.,Xing, ZG.,Wang, Y.,...&Zhou, JM.(2006).Lateral epitaxial overgrowth of GaN films on patterned sapphire substrates fabricated by wet chemical etching.THIN SOLID FILMS,515(4),1727. |
| MLA | Wang, J,et al."Lateral epitaxial overgrowth of GaN films on patterned sapphire substrates fabricated by wet chemical etching".THIN SOLID FILMS 515.4(2006):1727. |
入库方式： OAI收割
来源：物理研究所
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