Lateral range spread of MeV phosphorus ions implanted in silicon measured by time-of-flight secondary ion mass spectrometry
文献类型：期刊论文
| 作者 | Shi, BR ; Cue, N ; Smith, TL ; Xu, TB |
| 刊名 | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
 |
| 出版日期 | 1997 |
| 卷号 | 15期号:2页码:273 |
| 关键词 | PROFILE CALCULATIONS DISTRIBUTIONS BORON |
| 通讯作者 | Shi, BR: HONG KONG UNIV SCI & TECHNOL,DEPT PHYS,KOWLOON,HONG KONG. |
| 中文摘要 | The range profiles of 1.0 MeV P+ implanted into silicon with a dose of 1x10(15) cm(-2) at angles of 7 degrees, 45 degrees, and 60 degrees were measured by time-of-flight secondary ion mass spectrometry, The longitudinal and lateral range spreads at normal incidence were deduced from the measured profiles at oblique incidence. The measured profiles were systematically shallower and narrower than the TRIM'95 (Transport of Ions in Matter, 1995) predictions, but good agreement can be obtained if the electronic stopping power formula is slightly increased in the higher energy region during the calculations. (C) 1997 American Vacuum Society. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-18 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/40721]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Shi, BR,Cue, N,Smith, TL,et al. Lateral range spread of MeV phosphorus ions implanted in silicon measured by time-of-flight secondary ion mass spectrometry[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,1997,15(2):273. |
| APA | Shi, BR,Cue, N,Smith, TL,&Xu, TB.(1997).Lateral range spread of MeV phosphorus ions implanted in silicon measured by time-of-flight secondary ion mass spectrometry.JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,15(2),273. |
| MLA | Shi, BR,et al."Lateral range spread of MeV phosphorus ions implanted in silicon measured by time-of-flight secondary ion mass spectrometry".JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 15.2(1997):273. |
入库方式： OAI收割
来源：物理研究所
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