中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Lateral range spread of MeV phosphorus ions implanted in silicon measured by time-of-flight secondary ion mass spectrometry

文献类型:期刊论文

作者Shi, BR ; Cue, N ; Smith, TL ; Xu, TB
刊名JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
出版日期1997
卷号15期号:2页码:273
关键词PROFILE CALCULATIONS DISTRIBUTIONS BORON
通讯作者Shi, BR: HONG KONG UNIV SCI & TECHNOL,DEPT PHYS,KOWLOON,HONG KONG.
中文摘要The range profiles of 1.0 MeV P+ implanted into silicon with a dose of 1x10(15) cm(-2) at angles of 7 degrees, 45 degrees, and 60 degrees were measured by time-of-flight secondary ion mass spectrometry, The longitudinal and lateral range spreads at normal incidence were deduced from the measured profiles at oblique incidence. The measured profiles were systematically shallower and narrower than the TRIM'95 (Transport of Ions in Matter, 1995) predictions, but good agreement can be obtained if the electronic stopping power formula is slightly increased in the higher energy region during the calculations. (C) 1997 American Vacuum Society.
收录类别SCI
语种英语
公开日期2013-09-18
源URL[http://ir.iphy.ac.cn/handle/311004/40721]  
专题物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式
GB/T 7714
Shi, BR,Cue, N,Smith, TL,et al. Lateral range spread of MeV phosphorus ions implanted in silicon measured by time-of-flight secondary ion mass spectrometry[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,1997,15(2):273.
APA Shi, BR,Cue, N,Smith, TL,&Xu, TB.(1997).Lateral range spread of MeV phosphorus ions implanted in silicon measured by time-of-flight secondary ion mass spectrometry.JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,15(2),273.
MLA Shi, BR,et al."Lateral range spread of MeV phosphorus ions implanted in silicon measured by time-of-flight secondary ion mass spectrometry".JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 15.2(1997):273.

入库方式: OAI收割

来源:物理研究所

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