Layer-Controlled and Wafer-Scale Synthesis of Uniform and High-Quality Graphene Films on a Polycrystalline Nickel Catalyst
文献类型：期刊论文
| 作者 | Gong, YP ; Zhang, XM ; Liu, GT ; Wu, LQ ; Geng, XM ; Long, MS ; Cao, XH ; Guo, YF ; Li, WW ; Xu, JB ; Sun, MT ; Lu, L ; Liu, LW |
| 刊名 | ADVANCED FUNCTIONAL MATERIALS
 |
| 出版日期 | 2012 |
| 卷号 | 22期号:15页码:3153 |
| 关键词 | CHEMICAL-VAPOR-DEPOSITION LARGE-AREA CARBON SINGLE TRANSISTORS TRANSPORT GROWTH |
| ISSN号 | 1616-301X |
| 通讯作者 | Gong, YP: Chinese Acad Sci, Key Lab Nanodevices & Applicat, Suzhou Inst Nanotech & Nanobion, 398 Ruoshui Rd, Suzhou 215123, Jiangsu, Peoples R China. |
| 中文摘要 | Chemical vapor deposition (CVD) provides a synthesis route for large-area and high-quality graphene films. However, layer-controlled synthesis remains a great challenge on polycrystalline metallic films. Here, a facile and viable synthesis of layer-controlled and high-quality graphene films on wafer-scale Ni surface by the sequentially separated steps of gas carburization, hydrogen exposure, and segregation is developed. The layer numbers of graphene films with large domain sizes are controlled precisely at ambient pressure by modulating the simplified CVD process conditions and hydrogen exposure. The hydrogen exposure assisted with a Ni catalyst plays a critical role in promoting the preferential segregation through removing the carbon layers on the Ni surface and reducing carbon content in the Ni. Excellent electrical and transparent conductive performance, with a room-temperature mobility of approximate to 3000 cm2 V-1 s-1 and a sheet resistance as low as approximate to 100 O per square at approximate to 90% transmittance, of the twisted few-layer grapheme films grown on the Ni catalyst is demonstrated. |
| 收录类别 | SCI |
| 资助信息 | National Natural Science Foundation of China [10974141, 10834004, 90923003, 51102273]; Ministry of National Science and Technology Projects of China [2010CB934700, 2011ZX02707]; Jiangsu Province Postdoctoral Science Foundation [1101051C] |
| 语种 | 英语 |
| 公开日期 | 2013-09-18 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/40743]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Gong, YP,Zhang, XM,Liu, GT,et al. Layer-Controlled and Wafer-Scale Synthesis of Uniform and High-Quality Graphene Films on a Polycrystalline Nickel Catalyst[J]. ADVANCED FUNCTIONAL MATERIALS,2012,22(15):3153. |
| APA | Gong, YP.,Zhang, XM.,Liu, GT.,Wu, LQ.,Geng, XM.,...&Liu, LW.(2012).Layer-Controlled and Wafer-Scale Synthesis of Uniform and High-Quality Graphene Films on a Polycrystalline Nickel Catalyst.ADVANCED FUNCTIONAL MATERIALS,22(15),3153. |
| MLA | Gong, YP,et al."Layer-Controlled and Wafer-Scale Synthesis of Uniform and High-Quality Graphene Films on a Polycrystalline Nickel Catalyst".ADVANCED FUNCTIONAL MATERIALS 22.15(2012):3153. |
入库方式： OAI收割
来源：物理研究所
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